Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers

S. K. Ray; S. Maikap; S. K. Samanta; S. K. Banerjee; C. K. Maiti

doi:10.1016/S0038-1101(01)00239-8

Charge trapping characteristics of ultrathin oxynitrides on Si/Si_1-x-yGe_xC_y/Si heterolayers

S. K. Ray^*
, S. Maikap
, S. K. Samanta
, S. K. Banerjee
, C. K. Maiti

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

Ultrathin oxynitride films have been grown on partially strain compensated Si/Si_1-x-yGe_xC_y/Si layers by microwave plasma at a low temperature. Significant improvements in charge-to-breakdown (Q_BD) and charge trapping under static and dynamic electric field stress are observed for O₂/NH₃/NO-plasma treated films due to efficient removal of H species from the interface. The trapped charge generation and charge centroid show a frequency dependence for bipolar stress and polarity dependence in case of unipolar stress.

Original language	English
Pages (from-to)	1951-1955
Number of pages	5
Journal	Solid-State Electronics
Volume	45
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(01)00239-8
State	Published - 11 2001
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Charge trapping
Oxynitride
Plasma oxide
SiGeC

Access to Document

10.1016/S0038-1101(01)00239-8

Cite this

@article{3128fae5ce474bbbbc92491737a757b8,

title = "Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers",

abstract = "Ultrathin oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si layers by microwave plasma at a low temperature. Significant improvements in charge-to-breakdown (QBD) and charge trapping under static and dynamic electric field stress are observed for O2/NH3/NO-plasma treated films due to efficient removal of H species from the interface. The trapped charge generation and charge centroid show a frequency dependence for bipolar stress and polarity dependence in case of unipolar stress.",

keywords = "Charge trapping, Oxynitride, Plasma oxide, SiGeC",

author = "Ray, \{S. K.\} and S. Maikap and Samanta, \{S. K.\} and Banerjee, \{S. K.\} and Maiti, \{C. K.\}",

year = "2001",

month = nov,

doi = "10.1016/S0038-1101(01)00239-8",

language = "英语",

volume = "45",

pages = "1951--1955",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers

AU - Ray, S. K.

AU - Maikap, S.

AU - Samanta, S. K.

AU - Banerjee, S. K.

AU - Maiti, C. K.

PY - 2001/11

Y1 - 2001/11

N2 - Ultrathin oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si layers by microwave plasma at a low temperature. Significant improvements in charge-to-breakdown (QBD) and charge trapping under static and dynamic electric field stress are observed for O2/NH3/NO-plasma treated films due to efficient removal of H species from the interface. The trapped charge generation and charge centroid show a frequency dependence for bipolar stress and polarity dependence in case of unipolar stress.

AB - Ultrathin oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si layers by microwave plasma at a low temperature. Significant improvements in charge-to-breakdown (QBD) and charge trapping under static and dynamic electric field stress are observed for O2/NH3/NO-plasma treated films due to efficient removal of H species from the interface. The trapped charge generation and charge centroid show a frequency dependence for bipolar stress and polarity dependence in case of unipolar stress.

KW - Charge trapping

KW - Oxynitride

KW - Plasma oxide

KW - SiGeC

UR - https://www.scopus.com/pages/publications/0035501194

U2 - 10.1016/S0038-1101(01)00239-8

DO - 10.1016/S0038-1101(01)00239-8

M3 - 文章

AN - SCOPUS:0035501194

SN - 0038-1101

VL - 45

SP - 1951

EP - 1955

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -