CMOS-compatible electrochemical process for RF CMOS inductors

L. Y. Ding; T. Wang; Y. C. Hu; W. P. Shih; S. S. Lu; P. Z. Chang

doi:10.1109/SENSOR.2009.5285624

CMOS-compatible electrochemical process for RF CMOS inductors

L. Y. Ding, T. Wang, Y. C. Hu, W. P. Shih, S. S. Lu, P. Z. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This paper demonstrates a CMOS-compatible electrochemical etching process to reduce effectively the substrate loss which parasitizes RF CMOS inductors while maintains the mechanical support of silicon substrate. The advantages of this post-process are CMOS-compatible and mask-less that decreases substantially the difficulty and the cost of fabrication. The result presents that the quality factor of RF CMOS inductor is enhanced 100 % at 9.8 GHz through this post-process. In addition, this technique could advance the development of SOC (system on a chip) and the applications of RF CMOS circuit.

Original language	English
Title of host publication	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages	2118-2121
Number of pages	4
DOIs	https://doi.org/10.1109/SENSOR.2009.5285624
State	Published - 2009
Externally published	Yes
Event	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States Duration: 21 06 2009 → 25 06 2009

Publication series

Name	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Conference

Conference	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country/Territory	United States
City	Denver, CO
Period	21/06/09 → 25/06/09

Keywords

CMOS-MEMS
CMOS-compatible
Electrochemical etching
Porous silicon

Access to Document

10.1109/SENSOR.2009.5285624

Cite this

Ding, L. Y., Wang, T., Hu, Y. C., Shih, W. P., Lu, S. S., & Chang, P. Z. (2009). CMOS-compatible electrochemical process for RF CMOS inductors. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 2118-2121). Article 5285624 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285624

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title = "CMOS-compatible electrochemical process for RF CMOS inductors",

abstract = "This paper demonstrates a CMOS-compatible electrochemical etching process to reduce effectively the substrate loss which parasitizes RF CMOS inductors while maintains the mechanical support of silicon substrate. The advantages of this post-process are CMOS-compatible and mask-less that decreases substantially the difficulty and the cost of fabrication. The result presents that the quality factor of RF CMOS inductor is enhanced 100 % at 9.8 GHz through this post-process. In addition, this technique could advance the development of SOC (system on a chip) and the applications of RF CMOS circuit.",

keywords = "CMOS-MEMS, CMOS-compatible, Electrochemical etching, Porous silicon",

author = "Ding, {L. Y.} and T. Wang and Hu, {Y. C.} and Shih, {W. P.} and Lu, {S. S.} and Chang, {P. Z.}",

year = "2009",

doi = "10.1109/SENSOR.2009.5285624",

language = "英语",

isbn = "9781424441938",

series = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

pages = "2118--2121",

booktitle = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

note = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems ; Conference date: 21-06-2009 Through 25-06-2009",

}

Ding, LY, Wang, T, Hu, YC, Shih, WP, Lu, SS & Chang, PZ 2009, CMOS-compatible electrochemical process for RF CMOS inductors. in TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems., 5285624, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, pp. 2118-2121, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Denver, CO, United States, 21/06/09. https://doi.org/10.1109/SENSOR.2009.5285624

CMOS-compatible electrochemical process for RF CMOS inductors. / Ding, L. Y.; Wang, T.; Hu, Y. C. et al.
TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 2118-2121 5285624 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ding, L. Y.

AU - Wang, T.

AU - Hu, Y. C.

AU - Shih, W. P.

AU - Lu, S. S.

AU - Chang, P. Z.

PY - 2009

Y1 - 2009

N2 - This paper demonstrates a CMOS-compatible electrochemical etching process to reduce effectively the substrate loss which parasitizes RF CMOS inductors while maintains the mechanical support of silicon substrate. The advantages of this post-process are CMOS-compatible and mask-less that decreases substantially the difficulty and the cost of fabrication. The result presents that the quality factor of RF CMOS inductor is enhanced 100 % at 9.8 GHz through this post-process. In addition, this technique could advance the development of SOC (system on a chip) and the applications of RF CMOS circuit.

AB - This paper demonstrates a CMOS-compatible electrochemical etching process to reduce effectively the substrate loss which parasitizes RF CMOS inductors while maintains the mechanical support of silicon substrate. The advantages of this post-process are CMOS-compatible and mask-less that decreases substantially the difficulty and the cost of fabrication. The result presents that the quality factor of RF CMOS inductor is enhanced 100 % at 9.8 GHz through this post-process. In addition, this technique could advance the development of SOC (system on a chip) and the applications of RF CMOS circuit.

KW - CMOS-MEMS

KW - CMOS-compatible

KW - Electrochemical etching

KW - Porous silicon

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DO - 10.1109/SENSOR.2009.5285624

M3 - 会议稿件

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SN - 9781424441938

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ER -

Ding LY, Wang T, Hu YC, Shih WP, Lu SS, Chang PZ. CMOS-compatible electrochemical process for RF CMOS inductors. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 2118-2121. 5285624. (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). doi: 10.1109/SENSOR.2009.5285624

CMOS-compatible electrochemical process for RF CMOS inductors

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