Comparing High Mobility InGaAs FETs with Si and GOI Devices

C. C. Liao; H. L. Kao; Albert Chin; D. S. Yu; M. F. Li; C. Zhu; S. P. McAlister

Comparing High Mobility InGaAs FETs with Si and GOI Devices

C. C. Liao, H. L. Kao, Albert Chin, D. S. Yu, M. F. Li, C. Zhu, S. P. McAlister

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm²/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al₂O₃/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO₂/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm²/Vs effective mobility was 2.5X higher.

Original language	English
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	85-86
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Externally published	Yes
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: 26 06 2006 → 28 06 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	26/06/06 → 28/06/06

Bibliographical note

Publisher Copyright:
© 2006 IEEE.

Cite this

@inproceedings{69ab054b657c486a911db7ab0c800df1,

title = "Comparing High Mobility InGaAs FETs with Si and GOI Devices",

abstract = "We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.",

author = "Liao, {C. C.} and Kao, {H. L.} and Albert Chin and Yu, {D. S.} and Li, {M. F.} and C. Zhu and McAlister, {S. P.}",

note = "Publisher Copyright: {\textcopyright} 2006 IEEE.; 64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

year = "2006",

language = "英语",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "85--86",

booktitle = "64th DRC 2006 - Device Research Conference",

address = "美国",

}

Liao, CC, Kao, HL, Chin, A, Yu, DS, Li, MF, Zhu, C & McAlister, SP 2006, Comparing High Mobility InGaAs FETs with Si and GOI Devices. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 85-86, 64th Device Research Conference, DRC 2006, Parker, United States, 26/06/06.

Comparing High Mobility InGaAs FETs with Si and GOI Devices. / Liao, C. C.; Kao, H. L.; Chin, Albert et al.
64th DRC 2006 - Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2006. p. 85-86 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparing High Mobility InGaAs FETs with Si and GOI Devices

AU - Liao, C. C.

AU - Kao, H. L.

AU - Chin, Albert

AU - Yu, D. S.

AU - Li, M. F.

AU - Zhu, C.

AU - McAlister, S. P.

PY - 2006

Y1 - 2006

N2 - We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.

AB - We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.

UR - http://www.scopus.com/inward/record.url?scp=48749096200&partnerID=8YFLogxK

M3 - 会议稿件

AN - SCOPUS:48749096200

T3 - Device Research Conference - Conference Digest, DRC

SP - 85

EP - 86

BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Comparing High Mobility InGaAs FETs with Si and GOI Devices

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