Comparing High Mobility InGaAs FETs with Si and GOI Devices

C. C. Liao; H. L. Kao; Albert Chin; D. S. Yu; M. F. Li; C. Zhu; S. P. McAlister

Comparing High Mobility InGaAs FETs with Si and GOI Devices

C. C. Liao
, H. L. Kao
, Albert Chin
, D. S. Yu
, M. F. Li
, C. Zhu
, S. P. McAlister

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm²/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al₂O₃/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO₂/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm²/Vs effective mobility was 2.5X higher.

Original language	English
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	85-86
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Externally published	Yes
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: 26 06 2006 → 28 06 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	26/06/06 → 28/06/06

Bibliographical note

Publisher Copyright:
© 2006 IEEE.

Cite this

@inproceedings{69ab054b657c486a911db7ab0c800df1,

title = "Comparing High Mobility InGaAs FETs with Si and GOI Devices",

abstract = "We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.",

author = "Liao, \{C. C.\} and Kao, \{H. L.\} and Albert Chin and Yu, \{D. S.\} and Li, \{M. F.\} and C. Zhu and McAlister, \{S. P.\}",

note = "Publisher Copyright: {\textcopyright} 2006 IEEE.; 64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

year = "2006",

language = "英语",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "85--86",

booktitle = "64th DRC 2006 - Device Research Conference",

address = "美国",

}

Liao, CC, Kao, HL, Chin, A, Yu, DS, Li, MF, Zhu, C & McAlister, SP 2006, Comparing High Mobility InGaAs FETs with Si and GOI Devices. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 85-86, 64th Device Research Conference, DRC 2006, Parker, United States, 26/06/06.

Comparing High Mobility InGaAs FETs with Si and GOI Devices. / Liao, C. C.; Kao, H. L.; Chin, Albert et al.
64th DRC 2006 - Device Research Conference. Institute of Electrical and Electronics Engineers Inc., 2006. p. 85-86 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparing High Mobility InGaAs FETs with Si and GOI Devices

AU - Liao, C. C.

AU - Kao, H. L.

AU - Chin, Albert

AU - Yu, D. S.

AU - Li, M. F.

AU - Zhu, C.

AU - McAlister, S. P.

PY - 2006

Y1 - 2006

N2 - We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.

AB - We demonstrate a dislocation-free InAlAs/InGaAs/InAlAs-on-Insulator (IIIVOI) HEMT on a Si substrate, which has a high drain current and 8,100 cm2/Vs mobility. To reduce the Schottky gate leakage current in the device, a high-K Al2O3/InGaAs gate stack was used. By using this structure the gate leakage current was lower than that for a SiO2/Si MOSFET at the same equivalent-oxide-thickness (EOT), and the measured 451 cm2/Vs effective mobility was 2.5X higher.

UR - https://www.scopus.com/pages/publications/48749096200

M3 - 会议稿件

AN - SCOPUS:48749096200

T3 - Device Research Conference - Conference Digest, DRC

SP - 85

EP - 86

BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Comparing High Mobility InGaAs FETs with Si and GOI Devices

Abstract

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Conference

Bibliographical note

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