Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers

Ming Yuan Wu; Po Hsun Lei; Chia Lung Tsai; Chih Wei Hu; Meng Chyi Wu; Wen Jeng Ho

doi:10.1143/jjap.42.l1507

Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers

Ming Yuan Wu^*
, Po Hsun Lei
, Chia Lung Tsai
, Chih Wei Hu
, Meng Chyi Wu
, Wen Jeng Ho

^*Corresponding author for this work

National Tsing Hua University
Diwan College of Management
Chunghwa Telecom Co. Ltd.

Research output: Contribution to journal › Journal Article › peer-review

Abstract

In this letter, we have fabricated the 1.3-μm Al_0.20Ga _0.11In_0.69As/Al_0.30Ga_0.26In _0.44As strain-compensated multiple-quantum-well laser diodes (LDs) with the GaInAsP and AlGaInAs graded-composition layers above the upper and below the lower cladding layers, respectively. This new LD structure exhibits a lower threshold current of 9 mA, a higher characteristic temperature of 80 K between 20 and 70°C, a little red-shift rate of 0.4 nm/°C and a higher relaxation frequency of 8.14 GHz at 80 mA and 20°C. Without coupling loss and damping factor, the 3 dB bandwidth of 13.1 GHz can be achieved. These characteristics are better than those LDs without the graded-composition layers.

Original language	English
Pages (from-to)	L1507-L1508
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.42.l1507
State	Published - 15 12 2003
Externally published	Yes

Keywords

AlGaInAs/InP
Semiconductor lasers

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10.1143/jjap.42.l1507

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@article{171b3020d74d4d5eb7b9070c6f8c2297,

title = "Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers",

abstract = "In this letter, we have fabricated the 1.3-μm Al0.20Ga 0.11In0.69As/Al0.30Ga0.26In 0.44As strain-compensated multiple-quantum-well laser diodes (LDs) with the GaInAsP and AlGaInAs graded-composition layers above the upper and below the lower cladding layers, respectively. This new LD structure exhibits a lower threshold current of 9 mA, a higher characteristic temperature of 80 K between 20 and 70°C, a little red-shift rate of 0.4 nm/°C and a higher relaxation frequency of 8.14 GHz at 80 mA and 20°C. Without coupling loss and damping factor, the 3 dB bandwidth of 13.1 GHz can be achieved. These characteristics are better than those LDs without the graded-composition layers.",

keywords = "AlGaInAs/InP, Semiconductor lasers",

author = "Wu, \{Ming Yuan\} and Lei, \{Po Hsun\} and Tsai, \{Chia Lung\} and Hu, \{Chih Wei\} and Wu, \{Meng Chyi\} and Ho, \{Wen Jeng\}",

year = "2003",

month = dec,

day = "15",

doi = "10.1143/jjap.42.l1507",

language = "英语",

volume = "42",

pages = "L1507--L1508",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12 B",

}

Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers. / Wu, Ming Yuan; Lei, Po Hsun; Tsai, Chia Lung et al.
In: Japanese Journal of Applied Physics, Vol. 42, No. 12 B, 15.12.2003, p. L1507-L1508.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers

AU - Wu, Ming Yuan

AU - Lei, Po Hsun

AU - Tsai, Chia Lung

AU - Hu, Chih Wei

AU - Wu, Meng Chyi

AU - Ho, Wen Jeng

PY - 2003/12/15

Y1 - 2003/12/15

N2 - In this letter, we have fabricated the 1.3-μm Al0.20Ga 0.11In0.69As/Al0.30Ga0.26In 0.44As strain-compensated multiple-quantum-well laser diodes (LDs) with the GaInAsP and AlGaInAs graded-composition layers above the upper and below the lower cladding layers, respectively. This new LD structure exhibits a lower threshold current of 9 mA, a higher characteristic temperature of 80 K between 20 and 70°C, a little red-shift rate of 0.4 nm/°C and a higher relaxation frequency of 8.14 GHz at 80 mA and 20°C. Without coupling loss and damping factor, the 3 dB bandwidth of 13.1 GHz can be achieved. These characteristics are better than those LDs without the graded-composition layers.

AB - In this letter, we have fabricated the 1.3-μm Al0.20Ga 0.11In0.69As/Al0.30Ga0.26In 0.44As strain-compensated multiple-quantum-well laser diodes (LDs) with the GaInAsP and AlGaInAs graded-composition layers above the upper and below the lower cladding layers, respectively. This new LD structure exhibits a lower threshold current of 9 mA, a higher characteristic temperature of 80 K between 20 and 70°C, a little red-shift rate of 0.4 nm/°C and a higher relaxation frequency of 8.14 GHz at 80 mA and 20°C. Without coupling loss and damping factor, the 3 dB bandwidth of 13.1 GHz can be achieved. These characteristics are better than those LDs without the graded-composition layers.

KW - AlGaInAs/InP

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/1242265401

U2 - 10.1143/jjap.42.l1507

DO - 10.1143/jjap.42.l1507

M3 - 文章

AN - SCOPUS:1242265401

SN - 0021-4922

VL - 42

SP - L1507-L1508

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 B

ER -

Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers

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Keywords

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