Comparison of gadolinium oxide trapping layers in flash memory applications

Chyuan Haur Kao; Chun Chi Chen; Chih Ju Lin

doi:10.1016/j.vacuum.2015.02.033

Comparison of gadolinium oxide trapping layers in flash memory applications

Chyuan Haur Kao^*, Chun Chi Chen, Chih Ju Lin

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

This paper examines a high-k dielectric material used as a flash memory charge trapping layer. Specifically, the addition Ti into a Gd₂O₃ film trapping layer and placed under different RTA is compared with Gd₂O₃ samples, and the physical and electrical characterizations of different MOHOS-type memory structures are compared. Our research shows a faster program/erase speed and larger memory window resulting from the Gd₂TiO₅ trapping layer due to its increased charge capture density. Furthermore, a structure comprised of Al/SiO₂/Gd₂TiO₅/SiO₂/Si annealed at 900°C in O₂ ambient for 30 s demonstrated superior electrical characteristics. Our research indicates that memory devices using Gd₂TiO₅ with post-annealing treatment show promise for future flash memory applications.

Original language	English
Pages (from-to)	74-79
Number of pages	6
Journal	Vacuum
Volume	118
DOIs	https://doi.org/10.1016/j.vacuum.2015.02.033
State	Published - 01 08 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.

Keywords

GdTixOy based memory
High k dielectric
MOHOS capacitors

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10.1016/j.vacuum.2015.02.033

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title = "Comparison of gadolinium oxide trapping layers in flash memory applications",

abstract = "This paper examines a high-k dielectric material used as a flash memory charge trapping layer. Specifically, the addition Ti into a Gd2O3 film trapping layer and placed under different RTA is compared with Gd2O3 samples, and the physical and electrical characterizations of different MOHOS-type memory structures are compared. Our research shows a faster program/erase speed and larger memory window resulting from the Gd2TiO5 trapping layer due to its increased charge capture density. Furthermore, a structure comprised of Al/SiO2/Gd2TiO5/SiO2/Si annealed at 900°C in O2 ambient for 30 s demonstrated superior electrical characteristics. Our research indicates that memory devices using Gd2TiO5 with post-annealing treatment show promise for future flash memory applications.",

keywords = "GdTixOy based memory, High k dielectric, MOHOS capacitors",

author = "Kao, \{Chyuan Haur\} and Chen, \{Chun Chi\} and Lin, \{Chih Ju\}",

year = "2015",

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doi = "10.1016/j.vacuum.2015.02.033",

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T1 - Comparison of gadolinium oxide trapping layers in flash memory applications

AU - Kao, Chyuan Haur

AU - Chen, Chun Chi

AU - Lin, Chih Ju

PY - 2015/8/1

Y1 - 2015/8/1

N2 - This paper examines a high-k dielectric material used as a flash memory charge trapping layer. Specifically, the addition Ti into a Gd2O3 film trapping layer and placed under different RTA is compared with Gd2O3 samples, and the physical and electrical characterizations of different MOHOS-type memory structures are compared. Our research shows a faster program/erase speed and larger memory window resulting from the Gd2TiO5 trapping layer due to its increased charge capture density. Furthermore, a structure comprised of Al/SiO2/Gd2TiO5/SiO2/Si annealed at 900°C in O2 ambient for 30 s demonstrated superior electrical characteristics. Our research indicates that memory devices using Gd2TiO5 with post-annealing treatment show promise for future flash memory applications.

AB - This paper examines a high-k dielectric material used as a flash memory charge trapping layer. Specifically, the addition Ti into a Gd2O3 film trapping layer and placed under different RTA is compared with Gd2O3 samples, and the physical and electrical characterizations of different MOHOS-type memory structures are compared. Our research shows a faster program/erase speed and larger memory window resulting from the Gd2TiO5 trapping layer due to its increased charge capture density. Furthermore, a structure comprised of Al/SiO2/Gd2TiO5/SiO2/Si annealed at 900°C in O2 ambient for 30 s demonstrated superior electrical characteristics. Our research indicates that memory devices using Gd2TiO5 with post-annealing treatment show promise for future flash memory applications.

KW - GdTixOy based memory

KW - High k dielectric

KW - MOHOS capacitors

UR - https://www.scopus.com/pages/publications/84930275318

U2 - 10.1016/j.vacuum.2015.02.033

DO - 10.1016/j.vacuum.2015.02.033

M3 - 文章

AN - SCOPUS:84930275318

SN - 0042-207X

VL - 118

SP - 74

EP - 79

JO - Vacuum

JF - Vacuum

ER -

Comparison of gadolinium oxide trapping layers in flash memory applications

Abstract

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Keywords

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