Comparison of GaN P-I-N and Schottky rectifier performance

Anping P. Zhang; Gerard T. Dang; Fan Ren; Hyun Cho; Kyu Pil Lee; Stephen J. Pearton; Jenn Inn Chyi; T. E. Nee; C. M. Lee; C. C. Chuo

doi:10.1109/16.906427

Comparison of GaN P-I-N and Schottky rectifier performance

Anping P. Zhang, Gerard T. Dang, Fan Ren, Hyun Cho, Kyu Pil Lee, Stephen J. Pearton, Jenn Inn Chyi, T. E. Nee, C. M. Lee, C. C. Chuo

Research output: Contribution to journal › Journal Article › peer-review

79 Scopus citations

Abstract

The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K^-1.

Original language	English
Pages (from-to)	407-411
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/16.906427
State	Published - 03 2001
Externally published	Yes

Keywords

GaN
Power electronics
Rectifiers

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10.1109/16.906427

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title = "Comparison of GaN P-I-N and Schottky rectifier performance",

abstract = "The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.",

keywords = "GaN, Power electronics, Rectifiers",

author = "Zhang, {Anping P.} and Dang, {Gerard T.} and Fan Ren and Hyun Cho and Lee, {Kyu Pil} and Pearton, {Stephen J.} and Chyi, {Jenn Inn} and Nee, {T. E.} and Lee, {C. M.} and Chuo, {C. C.}",

year = "2001",

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volume = "48",

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T1 - Comparison of GaN P-I-N and Schottky rectifier performance

AU - Zhang, Anping P.

AU - Dang, Gerard T.

AU - Ren, Fan

AU - Cho, Hyun

AU - Lee, Kyu Pil

AU - Pearton, Stephen J.

AU - Chyi, Jenn Inn

AU - Nee, T. E.

AU - Lee, C. M.

AU - Chuo, C. C.

PY - 2001/3

Y1 - 2001/3

N2 - The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.

AB - The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.

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KW - Rectifiers

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M3 - 文章

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EP - 411

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Comparison of GaN P-I-N and Schottky rectifier performance

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Keywords

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