Comparison of GaN P-I-N and Schottky rectifier performance

Anping P. Zhang; Gerard T. Dang; Fan Ren; Hyun Cho; Kyu Pil Lee; Stephen J. Pearton; Jenn Inn Chyi; T. E. Nee; C. M. Lee; C. C. Chuo

doi:10.1109/16.906427

Comparison of GaN P-I-N and Schottky rectifier performance

Anping P. Zhang
, Gerard T. Dang
, Fan Ren
, Hyun Cho
, Kyu Pil Lee
, Stephen J. Pearton
, Jenn Inn Chyi
, T. E. Nee
, C. M. Lee
, C. C. Chuo

Research output: Contribution to journal › Journal Article › peer-review

79 Scopus citations

Abstract

The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K^-1.

Original language	English
Pages (from-to)	407-411
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/16.906427
State	Published - 03 2001
Externally published	Yes

Keywords

GaN
Power electronics
Rectifiers

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10.1109/16.906427

Cite this

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title = "Comparison of GaN P-I-N and Schottky rectifier performance",

abstract = "The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.",

keywords = "GaN, Power electronics, Rectifiers",

author = "Zhang, \{Anping P.\} and Dang, \{Gerard T.\} and Fan Ren and Hyun Cho and Lee, \{Kyu Pil\} and Pearton, \{Stephen J.\} and Chyi, \{Jenn Inn\} and Nee, \{T. E.\} and Lee, \{C. M.\} and Chuo, \{C. C.\}",

year = "2001",

month = mar,

doi = "10.1109/16.906427",

language = "英语",

volume = "48",

pages = "407--411",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Comparison of GaN P-I-N and Schottky rectifier performance

AU - Zhang, Anping P.

AU - Dang, Gerard T.

AU - Ren, Fan

AU - Cho, Hyun

AU - Lee, Kyu Pil

AU - Pearton, Stephen J.

AU - Chyi, Jenn Inn

AU - Nee, T. E.

AU - Lee, C. M.

AU - Chuo, C. C.

PY - 2001/3

Y1 - 2001/3

N2 - The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.

AB - The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperature. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on voltage (∼5 V for the p-i-n diodes; ∼3.5 V for the Schottky diodes). Both types of device showed a negative temperature coefficient for reverse breakdown, with value -0.34 ± 0.05 V · K-1.

KW - GaN

KW - Power electronics

KW - Rectifiers

UR - https://www.scopus.com/pages/publications/0035279875

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DO - 10.1109/16.906427

M3 - 文章

AN - SCOPUS:0035279875

SN - 0018-9383

VL - 48

SP - 407

EP - 411

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Comparison of GaN P-I-N and Schottky rectifier performance

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Keywords

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