Comparison of high-κ Nd₂O₃ and NdTiO₃ dielectrics deposited on polycrystalline silicon substrates

High-κ Nd₂O₃ and NdTiO₃ films deposited on polycrystalline silicon treated at various post-rapid thermal annealing temperatures were fabricated as high-κ gate dielectrics. The NdTiO₃ samples demonstrated a higher effective dielectric constant, lower leakage current, higher breakdown electric field, smaller gate voltage shift, and lower electron trapping rate than the high-κ Nd₂O₃ polyoxide dielectric samples. Annealing effects were analyzed using electrical measurements and multiple material analysis techniques included X-ray diffraction and atomic force microscopy. Incorporating Ti content into Nd₂O₃ dielectrics resulted in noticeable improvements in electrical performance and material quality. Results indicate that NdTiO₃ dielectrics show promise for future high-κ dielectric electronic device applications.