Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS

Albert Chin, C. Chen, D. S. Yu, H. L. Kao, S. P. McAlister*, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

14 Scopus citations

Abstract

High mobility channel materials such as Ge and compound semiconductors (CS) show promise for future generation MOSFETs. The challenge is to integrate these materials with a Si substrate and create good interfaces in the devices. Here we show dislocation-free CSOI and Ge-on-insulator (GOI) devices with good characteristics. The InAlAs/InGaAs/InAlAs-OI on Si MESFETs shows a mobility of 8100 cm2/V s. To reduce the leakage current an Al2O3/InGaAs MOSFET was fabricated. Good 451 cm2/V s mobility was obtained, higher than the 340 cm2/V s of GOI MOSFETs. However the marginally better mobility than GOI and 18X lower mobility than MESFETs indicate that the soft phonon scattering, high-κ interface scattering and process variations are challenges for CS MOSFETs. In contrast, the GOI CMOS provides a simpler process and significantly higher electron and hole mobilities than its Si counterparts.

Original languageEnglish
Pages (from-to)711-715
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume9
Issue number4-5 SPEC. ISS.
DOIs
StatePublished - 08 2006
Externally publishedYes

Keywords

  • Compound semiconductor FETs
  • Germanium-on-insulator
  • InGaAs MOSFET

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