Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding

Cher Ming Tan; Weibo Yu; Jun Wei

doi:10.1063/1.2185467

Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding

Cher Ming Tan^*, Weibo Yu, Jun Wei

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Journal Article › peer-review

46 Scopus citations

Abstract

Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing (500°C) for a short time (<5 h), the bond strength of these two low-temperature methods is improved as compared to the conventional air wafer bonding. The bond efficiency of MVWB is found to be better than the conventional air wafer bonding, but PAWB contains more bubbles. The qualitative mechanisms of these two low-temperature wafer bonding methods are proposed.

Original language	English
Article number	114102
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2185467
State	Published - 2006
Externally published	Yes

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title = "Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding",

abstract = "Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing (500°C) for a short time (<5 h), the bond strength of these two low-temperature methods is improved as compared to the conventional air wafer bonding. The bond efficiency of MVWB is found to be better than the conventional air wafer bonding, but PAWB contains more bubbles. The qualitative mechanisms of these two low-temperature wafer bonding methods are proposed.",

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AB - Two low-temperature wafer bonding methods, namely the medium-vacuum level wafer bonding (MVWB) and plasma-activated wafer bonding (PAWB), are performed. After low-temperature annealing (500°C) for a short time (<5 h), the bond strength of these two low-temperature methods is improved as compared to the conventional air wafer bonding. The bond efficiency of MVWB is found to be better than the conventional air wafer bonding, but PAWB contains more bubbles. The qualitative mechanisms of these two low-temperature wafer bonding methods are proposed.

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DO - 10.1063/1.2185467

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Comparison of medium-vacuum and plasma-activated low-temperature wafer bonding

Abstract

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