Comparison of structural and electrical properties of Er2O3 and ErTixOy charge-trapping layers for InGaZnO thin-film transistor nonvolatile memory devices

Tung Ming Pan*, Ching Hung Chen, Yi Hsiang Hu, Hung Chun Wang, Jim Long Her

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

13 Scopus citations

Abstract

In this letter, we investigate the structural and electrical characteristics of Er2O3 and ErTixOy charge-trapping layers for InGaZnO thin-film transistor (TFT) nonvolatile memory devices for the first time. Compared with the Er2O3 layer, the InGaZnO TFT memory device incorporating the ErTixOy charge-trapping layer exhibited a lower subthreshold swing of 146 mV/decade, a larger memory window of 3.9 V, a smaller charge loss of 10%, and better endurance performance for program/erase cycle up to 105, presumably due to the high charge efficiency in the ErTixOy film.

Original languageEnglish
Article number7366752
Pages (from-to)179-181
Number of pages3
JournalIEEE Electron Device Letters
Volume37
Issue number2
DOIs
StatePublished - 01 02 2016

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

  • charge-trapping layer
  • nonvolatile memory
  • thin-film transistor (TFT)

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