Abstract
The structural properties and electrical characteristics of metal-oxide-nitride-oxide-silicon memory structure by using praseodymium oxide (Pr2 O3) or praseodymium titanium oxide (Pr Tix Oy) to replace silicon nitride as the charge storage layer [resulting structure is termed metal-oxide-high- k material-oxide-silicon (MOHOS) devices] were investigated. The structural and morphological features of these high- k films were analyzed using x-ray diffraction, scanning electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. It was found that MOHOS memory prepared under the Pr Tix Oy film and annealed at 800 °C exhibited a large flatband voltage shift of 5.6 V and low charge loss of ∼6% at room temperature. We attribute this behavior to the titanium content in the Pr2 O3 film, suppressing interfacial Si O2 and silicate from forming at the Pr Tix Oy /oxide interface and enhancing nanocrystal formation.
Original language | English |
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Article number | 074111 |
Journal | Journal of Applied Physics |
Volume | 102 |
Issue number | 7 |
DOIs | |
State | Published - 2007 |