Comparison of structural and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane for pH-ISFET application

Tung Ming Pan; Kao Ming Liao

doi:10.1016/j.snb.2008.02.022

Comparison of structural and sensing characteristics of Pr₂O₃ and PrTiO₃ sensing membrane for pH-ISFET application

Tung Ming Pan^*, Kao Ming Liao

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

51 Scopus citations

Abstract

In this paper, we investigated on the structural properties and sensing characteristics of Pr₂O₃ and PrTiO₃ sensing membrane deposited on Si substrates by reactive rf sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. Compared with Pr₂O₃ sample, electrolyte-insulator-semiconductor devices with a high-k PrTiO₃ sensing film annealed at 800 °C exhibit good sensing characteristics, including a high sensitivity of 56.8 mV/pH in the solutions from pH 2 to pH 12, a small drift rate of 1.77 mV/h in the pH 7 buffer solution, and a low hysteresis voltage of 2.84 mV in the pH 7 → 4 → 7 → 10 →7. The improvement can be explained by the formation of a thinner interfacial SiO₂ and silicate layer, and the higher surface roughness.

Original language	English
Pages (from-to)	97-104
Number of pages	8
Journal	Sensors and Actuators, B: Chemical
Volume	133
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2008.02.022
State	Published - 28 07 2008

Keywords

Annealed at 800 °C
Drift rate
EIS
Hysteresis
Interfacial SiO and silicate layer
PrO
PrTiO
Sensing membrane
Sensitivity

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title = "Comparison of structural and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane for pH-ISFET application",

abstract = "In this paper, we investigated on the structural properties and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane deposited on Si substrates by reactive rf sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. Compared with Pr2O3 sample, electrolyte-insulator-semiconductor devices with a high-k PrTiO3 sensing film annealed at 800 °C exhibit good sensing characteristics, including a high sensitivity of 56.8 mV/pH in the solutions from pH 2 to pH 12, a small drift rate of 1.77 mV/h in the pH 7 buffer solution, and a low hysteresis voltage of 2.84 mV in the pH 7 → 4 → 7 → 10 →7. The improvement can be explained by the formation of a thinner interfacial SiO2 and silicate layer, and the higher surface roughness.",

keywords = "Annealed at 800 °C, Drift rate, EIS, Hysteresis, Interfacial SiO and silicate layer, PrO, PrTiO, Sensing membrane, Sensitivity",

author = "Pan, {Tung Ming} and Liao, {Kao Ming}",

year = "2008",

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AU - Pan, Tung Ming

AU - Liao, Kao Ming

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Y1 - 2008/7/28

N2 - In this paper, we investigated on the structural properties and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane deposited on Si substrates by reactive rf sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. Compared with Pr2O3 sample, electrolyte-insulator-semiconductor devices with a high-k PrTiO3 sensing film annealed at 800 °C exhibit good sensing characteristics, including a high sensitivity of 56.8 mV/pH in the solutions from pH 2 to pH 12, a small drift rate of 1.77 mV/h in the pH 7 buffer solution, and a low hysteresis voltage of 2.84 mV in the pH 7 → 4 → 7 → 10 →7. The improvement can be explained by the formation of a thinner interfacial SiO2 and silicate layer, and the higher surface roughness.

AB - In this paper, we investigated on the structural properties and sensing characteristics of Pr2O3 and PrTiO3 sensing membrane deposited on Si substrates by reactive rf sputtering. The structural and morphological features of these films with annealing at various temperatures were studied by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. Compared with Pr2O3 sample, electrolyte-insulator-semiconductor devices with a high-k PrTiO3 sensing film annealed at 800 °C exhibit good sensing characteristics, including a high sensitivity of 56.8 mV/pH in the solutions from pH 2 to pH 12, a small drift rate of 1.77 mV/h in the pH 7 buffer solution, and a low hysteresis voltage of 2.84 mV in the pH 7 → 4 → 7 → 10 →7. The improvement can be explained by the formation of a thinner interfacial SiO2 and silicate layer, and the higher surface roughness.

KW - Annealed at 800 °C

KW - Drift rate

KW - EIS

KW - Hysteresis

KW - Interfacial SiO and silicate layer

KW - PrO

KW - PrTiO

KW - Sensing membrane

KW - Sensitivity

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DO - 10.1016/j.snb.2008.02.022

M3 - 文章

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SN - 0925-4005

VL - 133

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JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

IS - 1

ER -

Comparison of structural and sensing characteristics of Pr₂O₃ and PrTiO₃ sensing membrane for pH-ISFET application

Abstract

Keywords

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