Comparison of the structural properties and electrical characteristics of Pr2O3, Nd2O3 and Er 2O3 charge trapping layer memories

Tung Ming Pan*, Te Yi Yu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

23 Scopus citations

Abstract

The structural properties and electrical characteristics of metal-oxide-high-fc material-oxidesilicon (MOHOS)-type memory devices using praseodymium oxide (Pr2O3), neodymium oxide (Nd 2O3) and erbium oxide (Er2O3) films as the charge storage layer were investigated. X-ray diffraction, atomic force microscopy and x-ray photoelectron spectroscopy were employed to analyze the structural and morphological features of these high-k films. It was found that MOHOS-type memory devices prepared under the Nd203 film and annealed at 800 °C exhibited a larger flatband voltage shift of 3 V (Vg = 10 V for 1 ms) and a lower charge loss of ~11% at room temperature as compared to other conditions. This result suggests that the Nd2O3 film having a rougher surface, higher ratio of silicate to silica and larger conduction band offset causes the higher probability for trapping the charge carrier and the deep electron trap level in the film.

Original languageEnglish
Article number095022
JournalSemiconductor Science and Technology
Volume24
Issue number9
DOIs
StatePublished - 2009

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