Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

Tung Ming Pan; Tan Fu Lei; Tien Sheng Chao

doi:10.1063/1.1347405

Comparison of ultrathin CoTiO₃ and NiTiO₃ high-k gate dielectrics

Tung Ming Pan^*
, Tan Fu Lei
, Tien Sheng Chao

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

31 Scopus citations

Abstract

High-k cobalt-titanium oxide (CoTiO₃) and nickel-titanium oxide (NiTiO₃) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO₃/Si₃N₄/Si and Al/NiTiO₃/Si₃N₄/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO₃ is larger than that of NiTiO₃. In addition, CoTiO₃ depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

Original language	English
Pages (from-to)	3447-3452
Number of pages	6
Journal	Journal of Applied Physics
Volume	89
Issue number	6
DOIs	https://doi.org/10.1063/1.1347405
State	Published - 15 03 2001
Externally published	Yes

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@article{4bbcb484362b4cd98fa05f5c5324855e,

title = "Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics",

abstract = "High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.",

author = "Pan, \{Tung Ming\} and Lei, \{Tan Fu\} and Chao, \{Tien Sheng\}",

year = "2001",

month = mar,

day = "15",

doi = "10.1063/1.1347405",

language = "英语",

volume = "89",

pages = "3447--3452",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics

AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien Sheng

PY - 2001/3/15

Y1 - 2001/3/15

N2 - High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - High-k cobalt-titanium oxide (CoTiO3) and nickel-titanium oxide (NiTiO3) were formed by directly oxidizing sputtered Co/Ti and Ni/Ti film. Al/CoTiO3/Si3N4/Si and Al/NiTiO3/Si3N4/Si capacitor structures were fabricated and measured. The effective dielectric constant (k values≅45) with buffer layer for CoTiO3 is larger than that of NiTiO3. In addition, CoTiO3 depicts excellent electrical properties at the same time. This metal oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

UR - https://www.scopus.com/pages/publications/0039189606

U2 - 10.1063/1.1347405

DO - 10.1063/1.1347405

M3 - 文章

AN - SCOPUS:0039189606

SN - 0021-8979

VL - 89

SP - 3447

EP - 3452

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Comparison of ultrathin CoTiO₃ and NiTiO₃ high-k gate dielectrics

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