Abstract
In the paper, the EIS structure with high-k ZnO sensing film has more responsive to H+ relative to Na+ and K+. The Ti doped ZnO sensing membrane annealed with RTA at 700°C shows a higher sensitivity of 57.56 mV/pH, higher linearity, lower hysteresis voltage of 2.79 mV and lower drift rate of 0.29mV/hr than the ZnO samples.
Original language | English |
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Title of host publication | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781509007264 |
DOIs | |
State | Published - 27 09 2016 |
Event | 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: 12 06 2016 → 13 06 2016 |
Publication series
Name | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
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Conference
Conference | 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
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Country/Territory | United States |
City | Honolulu |
Period | 12/06/16 → 13/06/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.