Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs

M. H. Lee; P. S. Chen; W. C. Hua; C. Y. Yu; Y. T. Tseng; S. Maikap; Y. M. Hsu; C. W. Liu; S. C. Lu; W. Y. Hsieh; M. J. Tsai

Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs

M. H. Lee^*, P. S. Chen, W. C. Hua, C. Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W. Y. Hsieh, M. J. Tsai

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

Due to the mobility enhancement of strained-Si channel, the strained-Si MOSFET has reportedly a great improvement on DC characteristics. The improvement on the cut-off frequency (f_T) of strained-Si device is demonstrated in this work. The strained-Si device has the same flicker noise (1/f) as the control Si device as long as no threading dislocation exists in the channel and the thermal budget is properly controlled. The large density of defect in the relaxed SiGe buffer layers shows no effect on the flicker noise. The threading dislocation penetrating into the strained-Si channel and Ge outdiffusion can degrade the flicker noise of strained-Si NMOSFETs. A thicker strained-Si channel layer can reduce the roughness scattering from the underneath strained Si/relaxed SiGe heterojunction, and yields a higher mobility, higher f_T, and lower noise figures, as compared to the thin strained-Si channel.

Original language	English
Pages (from-to)	69-72
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2003
Externally published	Yes
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 08 12 2003 → 10 12 2003

Cite this

@article{f94fbc26802e41b49086098a4c02bf92,

title = "Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs",

abstract = "Due to the mobility enhancement of strained-Si channel, the strained-Si MOSFET has reportedly a great improvement on DC characteristics. The improvement on the cut-off frequency (fT) of strained-Si device is demonstrated in this work. The strained-Si device has the same flicker noise (1/f) as the control Si device as long as no threading dislocation exists in the channel and the thermal budget is properly controlled. The large density of defect in the relaxed SiGe buffer layers shows no effect on the flicker noise. The threading dislocation penetrating into the strained-Si channel and Ge outdiffusion can degrade the flicker noise of strained-Si NMOSFETs. A thicker strained-Si channel layer can reduce the roughness scattering from the underneath strained Si/relaxed SiGe heterojunction, and yields a higher mobility, higher fT, and lower noise figures, as compared to the thin strained-Si channel.",

author = "Lee, {M. H.} and Chen, {P. S.} and Hua, {W. C.} and Yu, {C. Y.} and Tseng, {Y. T.} and S. Maikap and Hsu, {Y. M.} and Liu, {C. W.} and Lu, {S. C.} and Hsieh, {W. Y.} and Tsai, {M. J.}",

year = "2003",

language = "英语",

pages = "69--72",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs

AU - Lee, M. H.

AU - Chen, P. S.

AU - Hua, W. C.

AU - Yu, C. Y.

AU - Tseng, Y. T.

AU - Maikap, S.

AU - Hsu, Y. M.

AU - Liu, C. W.

AU - Lu, S. C.

AU - Hsieh, W. Y.

AU - Tsai, M. J.

PY - 2003

Y1 - 2003

N2 - Due to the mobility enhancement of strained-Si channel, the strained-Si MOSFET has reportedly a great improvement on DC characteristics. The improvement on the cut-off frequency (fT) of strained-Si device is demonstrated in this work. The strained-Si device has the same flicker noise (1/f) as the control Si device as long as no threading dislocation exists in the channel and the thermal budget is properly controlled. The large density of defect in the relaxed SiGe buffer layers shows no effect on the flicker noise. The threading dislocation penetrating into the strained-Si channel and Ge outdiffusion can degrade the flicker noise of strained-Si NMOSFETs. A thicker strained-Si channel layer can reduce the roughness scattering from the underneath strained Si/relaxed SiGe heterojunction, and yields a higher mobility, higher fT, and lower noise figures, as compared to the thin strained-Si channel.

AB - Due to the mobility enhancement of strained-Si channel, the strained-Si MOSFET has reportedly a great improvement on DC characteristics. The improvement on the cut-off frequency (fT) of strained-Si device is demonstrated in this work. The strained-Si device has the same flicker noise (1/f) as the control Si device as long as no threading dislocation exists in the channel and the thermal budget is properly controlled. The large density of defect in the relaxed SiGe buffer layers shows no effect on the flicker noise. The threading dislocation penetrating into the strained-Si channel and Ge outdiffusion can degrade the flicker noise of strained-Si NMOSFETs. A thicker strained-Si channel layer can reduce the roughness scattering from the underneath strained Si/relaxed SiGe heterojunction, and yields a higher mobility, higher fT, and lower noise figures, as compared to the thin strained-Si channel.

UR - http://www.scopus.com/inward/record.url?scp=0842331417&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0842331417

SN - 0163-1918

SP - 69

EP - 72

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs

Abstract

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