Computation of effective mobility in buried channel heterostructure MOSFET

G. S. Kar; S. Maikap; S. K. Ray; N. B. Chakrabarti

Computation of effective mobility in buried channel heterostructure MOSFET

G. S. Kar, S. Maikap, S. K. Ray^*, N. B. Chakrabarti

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Fabricated strained Si/Si_0.8Ge_0.2/Si heterojunction PMOSFET devices have been used to calculate the hole mobility in surface-Si and buried SiGe channels. A simple analysis based on the inversion layer mobility model has been used to find the current contribution of the buried SiGe channel to the total drain current. The 'true' effective mobility enhancement in the buried channel of the fabricated Si_0.8Ge_0.2 PMOSFET device has thus been extracted over a temperature range of 77-300K. The validity of the model has been verified by calculating the drain current as a function of drain voltage at different gate bias considering estimated effective mobility of both parasitic Si and buried SiGe channels.

Original language	English
Pages (from-to)	874-877
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4746 II
State	Published - 2002
Externally published	Yes
Event	Physics of Semiconductor Devices - Delhi, India Duration: 11 12 2001 → 15 12 2001

Cite this

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title = "Computation of effective mobility in buried channel heterostructure MOSFET",

abstract = "Fabricated strained Si/Si0.8Ge0.2/Si heterojunction PMOSFET devices have been used to calculate the hole mobility in surface-Si and buried SiGe channels. A simple analysis based on the inversion layer mobility model has been used to find the current contribution of the buried SiGe channel to the total drain current. The 'true' effective mobility enhancement in the buried channel of the fabricated Si0.8Ge0.2 PMOSFET device has thus been extracted over a temperature range of 77-300K. The validity of the model has been verified by calculating the drain current as a function of drain voltage at different gate bias considering estimated effective mobility of both parasitic Si and buried SiGe channels.",

author = "Kar, {G. S.} and S. Maikap and Ray, {S. K.} and Chakrabarti, {N. B.}",

year = "2002",

language = "英语",

volume = "4746 II",

pages = "874--877",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physics of Semiconductor Devices ; Conference date: 11-12-2001 Through 15-12-2001",

}

TY - JOUR

T1 - Computation of effective mobility in buried channel heterostructure MOSFET

AU - Kar, G. S.

AU - Maikap, S.

AU - Ray, S. K.

AU - Chakrabarti, N. B.

PY - 2002

Y1 - 2002

N2 - Fabricated strained Si/Si0.8Ge0.2/Si heterojunction PMOSFET devices have been used to calculate the hole mobility in surface-Si and buried SiGe channels. A simple analysis based on the inversion layer mobility model has been used to find the current contribution of the buried SiGe channel to the total drain current. The 'true' effective mobility enhancement in the buried channel of the fabricated Si0.8Ge0.2 PMOSFET device has thus been extracted over a temperature range of 77-300K. The validity of the model has been verified by calculating the drain current as a function of drain voltage at different gate bias considering estimated effective mobility of both parasitic Si and buried SiGe channels.

AB - Fabricated strained Si/Si0.8Ge0.2/Si heterojunction PMOSFET devices have been used to calculate the hole mobility in surface-Si and buried SiGe channels. A simple analysis based on the inversion layer mobility model has been used to find the current contribution of the buried SiGe channel to the total drain current. The 'true' effective mobility enhancement in the buried channel of the fabricated Si0.8Ge0.2 PMOSFET device has thus been extracted over a temperature range of 77-300K. The validity of the model has been verified by calculating the drain current as a function of drain voltage at different gate bias considering estimated effective mobility of both parasitic Si and buried SiGe channels.

UR - http://www.scopus.com/inward/record.url?scp=0036407475&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0036407475

SN - 0277-786X

VL - 4746 II

SP - 874

EP - 877

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics of Semiconductor Devices

Y2 - 11 December 2001 through 15 December 2001

ER -

Computation of effective mobility in buried channel heterostructure MOSFET

Abstract

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