Computer-aided design on the VLSI 45 C- mask compaction

W. S. Feng*, W. T. Yang, M. Y. Hsieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we combine 1-D compaction with reshaping -a new action, to improve the result of compaction. Our algorithms change layout elements' shapes automatically according to some criteria and make neighboring layout elements' shapes as similar as possible. The more similar they are, the more compactable space we can obtain. The main part of our compaction is reshaping. If elements of certain 45 degrees layout can be reassigned their geometric shapes, we reshape them in order to gain more compactable space. Some experimental results of this 45 degree compactor with and without reshaping of both Manhattan and nonManhattan-45 degree layouts are shown.

Original languageEnglish
Title of host publicationProc 1993 IEEE Reg 10 Conf Comput Commun Control Power Eng (TENCON '93)
Editors Anon
PublisherPubl by IEEE
Pages750-753
Number of pages4
ISBN (Print)0780312333
StatePublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE Region 10 Conference on Computer, Communication, Control aand Power Engineering. Part 3 (of 5) - Beijing, China
Duration: 19 10 199321 10 1993

Publication series

NameProc 1993 IEEE Reg 10 Conf Comput Commun Control Power Eng (TENCON '93)

Conference

ConferenceProceedings of the 1993 IEEE Region 10 Conference on Computer, Communication, Control aand Power Engineering. Part 3 (of 5)
CityBeijing, China
Period19/10/9321/10/93

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