Concentration dependence of carrier localization in InN epilayers

G. W. Shu; P. F. Wu; M. H. Lo; J. L. Shen; T. Y. Lin; H. J. Chang; Y. F. Chen; C. F. Shih; C. A. Chang; N. C. Chen

doi:10.1063/1.2357545

Concentration dependence of carrier localization in InN epilayers

G. W. Shu, P. F. Wu, M. H. Lo, J. L. Shen^*, T. Y. Lin, H. J. Chang, Y. F. Chen, C. F. Shih, C. A. Chang, N. C. Chen

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

27 Scopus citations

Abstract

The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photo luminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.

Original language	English
Article number	131913
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2357545
State	Published - 2006

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title = "Concentration dependence of carrier localization in InN epilayers",

abstract = "The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photo luminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.",

author = "Shu, {G. W.} and Wu, {P. F.} and Lo, {M. H.} and Shen, {J. L.} and Lin, {T. Y.} and Chang, {H. J.} and Chen, {Y. F.} and Shih, {C. F.} and Chang, {C. A.} and Chen, {N. C.}",

year = "2006",

doi = "10.1063/1.2357545",

language = "英语",

volume = "89",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Concentration dependence of carrier localization in InN epilayers

AU - Shu, G. W.

AU - Wu, P. F.

AU - Lo, M. H.

AU - Shen, J. L.

AU - Lin, T. Y.

AU - Chang, H. J.

AU - Chen, Y. F.

AU - Shih, C. F.

AU - Chang, C. A.

AU - Chen, N. C.

PY - 2006

Y1 - 2006

N2 - The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photo luminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.

AB - The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photo luminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.

UR - http://www.scopus.com/inward/record.url?scp=33749238336&partnerID=8YFLogxK

U2 - 10.1063/1.2357545

DO - 10.1063/1.2357545

M3 - 文章

AN - SCOPUS:33749238336

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131913

ER -

Concentration dependence of carrier localization in InN epilayers

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