Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method

Cher Ming Tan; Minh Due Le

doi:10.1109/EDSSC.2011.6117565

Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method

Cher Ming Tan^*
, Minh Due Le

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Inductive Couple Plasma (ICP) etching tool has been commonly used for higher throughput and better width control in semiconductor processing. However, this process is often contaminated by particles, and Particle per Wafer Pass (PWP) test must be carried out to monitor the contamination. Unfortunately, in actual manufacturing, the gaseous recipes used during etching vary on the etched materials, which lead to unexpected and unpredictable byproducts and particle counts in a given production run, rendering the particle count from PWP highly stochastic which may result in missing of the time for necessary wet cleaning of the chamber. In this work, we analyze the daily PWP results from an inductively coupled plasma etching (ICP) chamber for an eight-month period. The behavior of the particle count can be modeled as a stochastic function of the accumulated gaseous recipes flowing though the chamber. The particle count is found to follow a Negative Binomial (NB) distribution with varied parameters. The model is useful in determining the optimal time for wet clean

Original language	English
Title of host publication	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs	https://doi.org/10.1109/EDSSC.2011.6117565
State	Published - 2011
Externally published	Yes
Event	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China Duration: 17 11 2011 → 18 11 2011

Publication series

Name	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Conference

Conference	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Country/Territory	China
City	Tianjin
Period	17/11/11 → 18/11/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

inductive couple plasma etching
negative binomial distribution
particle count
particle per wafer pass

Access to Document

10.1109/EDSSC.2011.6117565

Cite this

Tan, C. M., & Le, M. D. (2011). Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 Article 6117565 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). https://doi.org/10.1109/EDSSC.2011.6117565

@inproceedings{1634e9b20ef74f3aa7aa43200f06b1b4,

title = "Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method",

abstract = "Inductive Couple Plasma (ICP) etching tool has been commonly used for higher throughput and better width control in semiconductor processing. However, this process is often contaminated by particles, and Particle per Wafer Pass (PWP) test must be carried out to monitor the contamination. Unfortunately, in actual manufacturing, the gaseous recipes used during etching vary on the etched materials, which lead to unexpected and unpredictable byproducts and particle counts in a given production run, rendering the particle count from PWP highly stochastic which may result in missing of the time for necessary wet cleaning of the chamber. In this work, we analyze the daily PWP results from an inductively coupled plasma etching (ICP) chamber for an eight-month period. The behavior of the particle count can be modeled as a stochastic function of the accumulated gaseous recipes flowing though the chamber. The particle count is found to follow a Negative Binomial (NB) distribution with varied parameters. The model is useful in determining the optimal time for wet clean",

keywords = "inductive couple plasma etching, negative binomial distribution, particle count, particle per wafer pass",

author = "Tan, \{Cher Ming\} and Le, \{Minh Due\}",

year = "2011",

doi = "10.1109/EDSSC.2011.6117565",

language = "英语",

isbn = "9781457719974",

series = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",

}

Tan, CM & Le, MD 2011, Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011., 6117565, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, Tianjin, China, 17/11/11. https://doi.org/10.1109/EDSSC.2011.6117565

Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method. / Tan, Cher Ming; Le, Minh Due.
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117565 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method

AU - Tan, Cher Ming

AU - Le, Minh Due

PY - 2011

Y1 - 2011

N2 - Inductive Couple Plasma (ICP) etching tool has been commonly used for higher throughput and better width control in semiconductor processing. However, this process is often contaminated by particles, and Particle per Wafer Pass (PWP) test must be carried out to monitor the contamination. Unfortunately, in actual manufacturing, the gaseous recipes used during etching vary on the etched materials, which lead to unexpected and unpredictable byproducts and particle counts in a given production run, rendering the particle count from PWP highly stochastic which may result in missing of the time for necessary wet cleaning of the chamber. In this work, we analyze the daily PWP results from an inductively coupled plasma etching (ICP) chamber for an eight-month period. The behavior of the particle count can be modeled as a stochastic function of the accumulated gaseous recipes flowing though the chamber. The particle count is found to follow a Negative Binomial (NB) distribution with varied parameters. The model is useful in determining the optimal time for wet clean

AB - Inductive Couple Plasma (ICP) etching tool has been commonly used for higher throughput and better width control in semiconductor processing. However, this process is often contaminated by particles, and Particle per Wafer Pass (PWP) test must be carried out to monitor the contamination. Unfortunately, in actual manufacturing, the gaseous recipes used during etching vary on the etched materials, which lead to unexpected and unpredictable byproducts and particle counts in a given production run, rendering the particle count from PWP highly stochastic which may result in missing of the time for necessary wet cleaning of the chamber. In this work, we analyze the daily PWP results from an inductively coupled plasma etching (ICP) chamber for an eight-month period. The behavior of the particle count can be modeled as a stochastic function of the accumulated gaseous recipes flowing though the chamber. The particle count is found to follow a Negative Binomial (NB) distribution with varied parameters. The model is useful in determining the optimal time for wet clean

KW - inductive couple plasma etching

KW - negative binomial distribution

KW - particle count

KW - particle per wafer pass

UR - https://www.scopus.com/pages/publications/84856084240

U2 - 10.1109/EDSSC.2011.6117565

DO - 10.1109/EDSSC.2011.6117565

M3 - 会议稿件

AN - SCOPUS:84856084240

SN - 9781457719974

T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Y2 - 17 November 2011 through 18 November 2011

ER -

Tan CM, Le MD. Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117565. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). doi: 10.1109/EDSSC.2011.6117565

Contamination assessment of inductive couple plasma etching chamber under mixture of recipes using statistical method

Abstract

Publication series

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UN SDGs

Keywords

Access to Document

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