Control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure

M. Y. Li; H. L. Kao; W. J. Chang; C. L. Lin; C. C. Chi; Weiyan Guan; M. K. Wu

doi:10.1063/1.359557

Control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure

M. Y. Li^*, H. L. Kao, W. J. Chang, C. L. Lin, C. C. Chi, Weiyan Guan, M. K. Wu

^*Corresponding author for this work

Department of Electronic Engineering

National Tsing Hua University

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

In order to obtain 100% bi-epitaxial 45°grain boundary junctions of YBa₂Cu₃O_x (YBCO), we have systematically examined the in-plane epitaxy of CeO₂ films grown on MgO substrates. The inevitable presence of CeO₂[110]∥MgO[100] causes mixtures of in-plane rotation of 0°and 45°between YBCO/CeO₂/MgO and YBCO/MgO. We have further developed a new structure, namely YBCO/CeO ₂/Yttria-stabilized ZrO₂/MgO and YBCO/MgO boundary, so that 100% in-plane rotation of 45°can be routinely obtained. The model of the in-plane epitaxial relationship between the multilayers using near coincident site lattices was proposed. The critical current density of the junctions made on the boundary is 3×10³ A/cm² at 77 K, while the order of the J_c of YBCO films on both sides of the grain boundary is 10⁶ A/cm². The current-voltage characteristics of the junctions show resistively shunted junction behavior. The better epitaxy of our new structure can lead to a better control of grain boundary critical current density.

Original language	English
Pages (from-to)	4584-4588
Number of pages	5
Journal	Journal of Applied Physics
Volume	77
Issue number	9
DOIs	https://doi.org/10.1063/1.359557
State	Published - 1995

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@article{d1c72633828d442ca6795c469328bbc1,

title = "Control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure",

abstract = "In order to obtain 100% bi-epitaxial 45°grain boundary junctions of YBa2Cu3Ox (YBCO), we have systematically examined the in-plane epitaxy of CeO2 films grown on MgO substrates. The inevitable presence of CeO2[110]∥MgO[100] causes mixtures of in-plane rotation of 0°and 45°between YBCO/CeO2/MgO and YBCO/MgO. We have further developed a new structure, namely YBCO/CeO 2/Yttria-stabilized ZrO2/MgO and YBCO/MgO boundary, so that 100% in-plane rotation of 45°can be routinely obtained. The model of the in-plane epitaxial relationship between the multilayers using near coincident site lattices was proposed. The critical current density of the junctions made on the boundary is 3×103 A/cm2 at 77 K, while the order of the Jc of YBCO films on both sides of the grain boundary is 106 A/cm2. The current-voltage characteristics of the junctions show resistively shunted junction behavior. The better epitaxy of our new structure can lead to a better control of grain boundary critical current density.",

author = "Li, {M. Y.} and Kao, {H. L.} and Chang, {W. J.} and Lin, {C. L.} and Chi, {C. C.} and Weiyan Guan and Wu, {M. K.}",

year = "1995",

doi = "10.1063/1.359557",

language = "英语",

volume = "77",

pages = "4584--4588",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure

AU - Li, M. Y.

AU - Kao, H. L.

AU - Chang, W. J.

AU - Lin, C. L.

AU - Chi, C. C.

AU - Guan, Weiyan

AU - Wu, M. K.

PY - 1995

Y1 - 1995

N2 - In order to obtain 100% bi-epitaxial 45°grain boundary junctions of YBa2Cu3Ox (YBCO), we have systematically examined the in-plane epitaxy of CeO2 films grown on MgO substrates. The inevitable presence of CeO2[110]∥MgO[100] causes mixtures of in-plane rotation of 0°and 45°between YBCO/CeO2/MgO and YBCO/MgO. We have further developed a new structure, namely YBCO/CeO 2/Yttria-stabilized ZrO2/MgO and YBCO/MgO boundary, so that 100% in-plane rotation of 45°can be routinely obtained. The model of the in-plane epitaxial relationship between the multilayers using near coincident site lattices was proposed. The critical current density of the junctions made on the boundary is 3×103 A/cm2 at 77 K, while the order of the Jc of YBCO films on both sides of the grain boundary is 106 A/cm2. The current-voltage characteristics of the junctions show resistively shunted junction behavior. The better epitaxy of our new structure can lead to a better control of grain boundary critical current density.

AB - In order to obtain 100% bi-epitaxial 45°grain boundary junctions of YBa2Cu3Ox (YBCO), we have systematically examined the in-plane epitaxy of CeO2 films grown on MgO substrates. The inevitable presence of CeO2[110]∥MgO[100] causes mixtures of in-plane rotation of 0°and 45°between YBCO/CeO2/MgO and YBCO/MgO. We have further developed a new structure, namely YBCO/CeO 2/Yttria-stabilized ZrO2/MgO and YBCO/MgO boundary, so that 100% in-plane rotation of 45°can be routinely obtained. The model of the in-plane epitaxial relationship between the multilayers using near coincident site lattices was proposed. The critical current density of the junctions made on the boundary is 3×103 A/cm2 at 77 K, while the order of the Jc of YBCO films on both sides of the grain boundary is 106 A/cm2. The current-voltage characteristics of the junctions show resistively shunted junction behavior. The better epitaxy of our new structure can lead to a better control of grain boundary critical current density.

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U2 - 10.1063/1.359557

DO - 10.1063/1.359557

M3 - 文章

AN - SCOPUS:0008936562

SN - 0021-8979

VL - 77

SP - 4584

EP - 4588

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure

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