Correlation field analysis of magnetoresistance of GaN/AlGaN heterostructure grown on Si substrate

Li Hung Lin; Shiou Shian Han; Kui Ming Chen; Zhi Yao Zhang; Kuang Yao Chen; J. Z. Huang; Zhi Hao Sun; C. T. Liang; N. C. Chen; P. H. Chang; Chin An Chang

doi:10.1143/JJAP.47.4623

Correlation field analysis of magnetoresistance of GaN/AlGaN heterostructure grown on Si substrate

Li Hung Lin^*, Shiou Shian Han, Kui Ming Chen, Zhi Yao Zhang, Kuang Yao Chen, J. Z. Huang, Zhi Hao Sun, C. T. Liang, N. C. Chen, P. H. Chang, Chin An Chang

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

We analyze the conductance fluctuations for a bulk two-dimensional electron system in a GaN/Al_0.15Ga_0.85N heterostructure grown on a p-type Si(lll) substrate, and calculate the correlation field B_c with the autocorrelation function F(ΔB) = (δG(B + ΔB) -δG(B)), in the temperature range 0.27 ≤ T ≤ 3 K, which is employed as a self-thermometer to obtain the effective carrier temperature T_e as a function of the measurement current I. We find that the temperature dependence agrees well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In the study of hot-carrier phenomena, we also obtain T_e ∼ I^0.5, which agrees with some theoretical prediction.

Original language	English
Pages (from-to)	4623-4625
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	6 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.4623
State	Published - 13 06 2008

Keywords

Conductance fluctuation
Current scaling
GaN
HEMT
Hot carrier

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10.1143/JJAP.47.4623

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@article{f76853392a134c1abc3de39c5c7b9b3a,

title = "Correlation field analysis of magnetoresistance of GaN/AlGaN heterostructure grown on Si substrate",

abstract = "We analyze the conductance fluctuations for a bulk two-dimensional electron system in a GaN/Al0.15Ga0.85N heterostructure grown on a p-type Si(lll) substrate, and calculate the correlation field Bc with the autocorrelation function F(ΔB) = (δG(B + ΔB) -δG(B)), in the temperature range 0.27 ≤ T ≤ 3 K, which is employed as a self-thermometer to obtain the effective carrier temperature Te as a function of the measurement current I. We find that the temperature dependence agrees well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In the study of hot-carrier phenomena, we also obtain Te ∼ I0.5, which agrees with some theoretical prediction.",

keywords = "Conductance fluctuation, Current scaling, GaN, HEMT, Hot carrier",

author = "Lin, {Li Hung} and Han, {Shiou Shian} and Chen, {Kui Ming} and Zhang, {Zhi Yao} and Chen, {Kuang Yao} and Huang, {J. Z.} and Sun, {Zhi Hao} and Liang, {C. T.} and Chen, {N. C.} and Chang, {P. H.} and Chang, {Chin An}",

year = "2008",

month = jun,

day = "13",

doi = "10.1143/JJAP.47.4623",

language = "英语",

volume = "47",

pages = "4623--4625",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 PART 1",

}

TY - JOUR

T1 - Correlation field analysis of magnetoresistance of GaN/AlGaN heterostructure grown on Si substrate

AU - Lin, Li Hung

AU - Han, Shiou Shian

AU - Chen, Kui Ming

AU - Zhang, Zhi Yao

AU - Chen, Kuang Yao

AU - Huang, J. Z.

AU - Sun, Zhi Hao

AU - Liang, C. T.

AU - Chen, N. C.

AU - Chang, P. H.

AU - Chang, Chin An

PY - 2008/6/13

Y1 - 2008/6/13

N2 - We analyze the conductance fluctuations for a bulk two-dimensional electron system in a GaN/Al0.15Ga0.85N heterostructure grown on a p-type Si(lll) substrate, and calculate the correlation field Bc with the autocorrelation function F(ΔB) = (δG(B + ΔB) -δG(B)), in the temperature range 0.27 ≤ T ≤ 3 K, which is employed as a self-thermometer to obtain the effective carrier temperature Te as a function of the measurement current I. We find that the temperature dependence agrees well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In the study of hot-carrier phenomena, we also obtain Te ∼ I0.5, which agrees with some theoretical prediction.

AB - We analyze the conductance fluctuations for a bulk two-dimensional electron system in a GaN/Al0.15Ga0.85N heterostructure grown on a p-type Si(lll) substrate, and calculate the correlation field Bc with the autocorrelation function F(ΔB) = (δG(B + ΔB) -δG(B)), in the temperature range 0.27 ≤ T ≤ 3 K, which is employed as a self-thermometer to obtain the effective carrier temperature Te as a function of the measurement current I. We find that the temperature dependence agrees well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In the study of hot-carrier phenomena, we also obtain Te ∼ I0.5, which agrees with some theoretical prediction.

KW - Conductance fluctuation

KW - Current scaling

KW - GaN

KW - HEMT

KW - Hot carrier

UR - http://www.scopus.com/inward/record.url?scp=55049110463&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.4623

DO - 10.1143/JJAP.47.4623

M3 - 文章

AN - SCOPUS:55049110463

SN - 0021-4922

VL - 47

SP - 4623

EP - 4625

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 PART 1

ER -

Correlation field analysis of magnetoresistance of GaN/AlGaN heterostructure grown on Si substrate

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Keywords

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