Corrigendum to “Low-damage NH₃ plasma treatment on SiO₂ tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory” [Curr. Appl. Phys. (2016) 16(5) (605−610)] (S1567173916300487)(10.1016/j.cap.2016.03.009)

The authors regret for the erroneous affiliations of Chao-Sung Lai: Chao-Sung Lai ^{a, c a} Department of Electronic Engineering, Chang Gung University, Guishan Dist., 33302, Taoyuan, Taiwan ^c Center for Reliability Sciences & Technologies (CREST), Chang Gung University, Guishan Dist., 33302, Taoyuan, Taiwan It should be as follows: Chao-Sung Lai ^{a, c, e a} Department of Electronic Engineering, Chang Gung University, Guishan Dist., 33302, Taoyuan, Taiwan ^c Center for Reliability Sciences & Technologies (CREST), Chang Gung University, Guishan Dist., 33302, Taoyuan, Taiwan ^e Department of Nephrology, Chang Gung Memorial Hospital, Guishan Dist. 33305, Taoyuan, Taiwan The authors would like to apologise for any inconvenience caused.