TY - JOUR
T1 - Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications
AU - Kumar, Pankaj
AU - Maikap, Siddheswar
AU - Ginnaram, Sreekanth
AU - Qiu, Jian Tai
AU - Jana, Debanjan
AU - Chakrabarti, Somsubhra
AU - Samanta, Subhranu
AU - Singh, Kanishk
AU - Roy, Anisha
AU - Jana, Surajit
AU - Dutta, Mrinmoy
AU - Chang, Ya Ling
AU - Cheng, Hsin Ming
AU - Mahapatra, Rajat
AU - Chiu, Hsien Chin
AU - Yang, Jer Ren
N1 - Publisher Copyright:
© The Author(s) 2017. Published by ECS. All rights reserved.
PY - 2017
Y1 - 2017
N2 - Resistive switching characteristics and urea sensing have been investigated by using annealed GdOx film in IrOx/GdOx/W cross-point memory for the first time. The annealed GdOx film shows larger polycrystalline grains as compared to as-deposited films, which is observed by high-resolution transmission electron microscope (HRTEM) and X-ray diffraction patterns (XRD). Surface roughness of the GdOx films on W nano-dome is observed by atomic force microscope (AFM). The annealed IrOx/GdOx/W cross-point memory shows resistance ratio of 1000x times higher, multi-level operation with varying current compliance (CC) from 10-300 μA, good non-linearity factor of 8.3, good dc switching cycles of > 1000 at CC of 10 μA, long read endurance of >109 cycles with pulse width of 1 μs at higher read voltage of -0.5 V, and high speed operation of 100 ns. Repeatable resistive switching characteristics at low CC of 10 μA and mechanism are due to the electric field enhancement on the W nano-dome simulated by MATLAB, which controls the O2- ions migration through polycrystalline GdOx grain boundary as well as Schottky barrier height modulation (0.59 vs. 0.39 eV). In addition, the annealed GdOx membrane in electrolyte-insulator-semiconductor (EIS) structure shows higher pH sensitivity than the as-deposited film (53.2 vs. 45.1 mV/pH) and lower drift (1.8 vs. 2.6 mV/hr) as well as lower detection of pH change (0.034). Detection of pH and urea sensing from 6 to 24 mg/dl have been measured by using cross-point memory, and the sensing mechanism is also discussed, which will be very useful for real healthcare unit in near future.
AB - Resistive switching characteristics and urea sensing have been investigated by using annealed GdOx film in IrOx/GdOx/W cross-point memory for the first time. The annealed GdOx film shows larger polycrystalline grains as compared to as-deposited films, which is observed by high-resolution transmission electron microscope (HRTEM) and X-ray diffraction patterns (XRD). Surface roughness of the GdOx films on W nano-dome is observed by atomic force microscope (AFM). The annealed IrOx/GdOx/W cross-point memory shows resistance ratio of 1000x times higher, multi-level operation with varying current compliance (CC) from 10-300 μA, good non-linearity factor of 8.3, good dc switching cycles of > 1000 at CC of 10 μA, long read endurance of >109 cycles with pulse width of 1 μs at higher read voltage of -0.5 V, and high speed operation of 100 ns. Repeatable resistive switching characteristics at low CC of 10 μA and mechanism are due to the electric field enhancement on the W nano-dome simulated by MATLAB, which controls the O2- ions migration through polycrystalline GdOx grain boundary as well as Schottky barrier height modulation (0.59 vs. 0.39 eV). In addition, the annealed GdOx membrane in electrolyte-insulator-semiconductor (EIS) structure shows higher pH sensitivity than the as-deposited film (53.2 vs. 45.1 mV/pH) and lower drift (1.8 vs. 2.6 mV/hr) as well as lower detection of pH change (0.034). Detection of pH and urea sensing from 6 to 24 mg/dl have been measured by using cross-point memory, and the sensing mechanism is also discussed, which will be very useful for real healthcare unit in near future.
UR - http://www.scopus.com/inward/record.url?scp=85019055624&partnerID=8YFLogxK
U2 - 10.1149/2.1011704jes
DO - 10.1149/2.1011704jes
M3 - 文章
AN - SCOPUS:85019055624
SN - 0013-4651
VL - 164
SP - B127-B135
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 4
ER -