Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers

Tzer En Nee; Jen Cheng Wang; Chung Han Lin; Ray Ming Lin; Ching An Huang; Bor Ren Fang; Ruey Yu Wang

doi:10.1116/1.1924611

Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers

Tzer En Nee^*, Jen Cheng Wang, Chung Han Lin, Ray Ming Lin, Ching An Huang, Bor Ren Fang, Ruey Yu Wang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

Cross sections of the electroluminescence (EL) excitation of InGaNGaN multiquantum wells (MQWs) in blue light-emitting diodes (LEDs) with multiquantum barriers (MQBs) have been investigated. It was found that a device with an MQB structure exhibited a higher quantum efficiency, as well as higher temperature insensitivity, compared with the conventional MQW LEDs. A total cross section of 5.3× 10-15 cm2 was obtained for the MQB QWs, by fitting them to the measurement of the spectral intensity at room temperature; the value was 4.5× 10-15 cm2 for those devices with GaN barriers. Not only the EL excitation cross section for active region, but also the abnormal quantum efficiency evolutions were found to be a function of temperature. Moreover, they were in good agreement with the rate equation model.

Original language	English
Pages (from-to)	966-969
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	3
DOIs	https://doi.org/10.1116/1.1924611
State	Published - 2005

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Nee, T. E., Wang, J. C., Lin, C. H., Lin, R. M., Huang, C. A., Fang, B. R., & Wang, R. Y. (2005). Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(3), 966-969. https://doi.org/10.1116/1.1924611

@article{b61fcac5e18b4e91afcf53b1a314f653,

title = "Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers",

abstract = "Cross sections of the electroluminescence (EL) excitation of InGaNGaN multiquantum wells (MQWs) in blue light-emitting diodes (LEDs) with multiquantum barriers (MQBs) have been investigated. It was found that a device with an MQB structure exhibited a higher quantum efficiency, as well as higher temperature insensitivity, compared with the conventional MQW LEDs. A total cross section of 5.3× 10-15 cm2 was obtained for the MQB QWs, by fitting them to the measurement of the spectral intensity at room temperature; the value was 4.5× 10-15 cm2 for those devices with GaN barriers. Not only the EL excitation cross section for active region, but also the abnormal quantum efficiency evolutions were found to be a function of temperature. Moreover, they were in good agreement with the rate equation model.",

author = "Nee, {Tzer En} and Wang, {Jen Cheng} and Lin, {Chung Han} and Lin, {Ray Ming} and Huang, {Ching An} and Fang, {Bor Ren} and Wang, {Ruey Yu}",

year = "2005",

doi = "10.1116/1.1924611",

language = "英语",

volume = "23",

pages = "966--969",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

Nee, TE, Wang, JC, Lin, CH, Lin, RM, Huang, CA, Fang, BR & Wang, RY 2005, 'Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 3, pp. 966-969. https://doi.org/10.1116/1.1924611

Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers. / Nee, Tzer En; Wang, Jen Cheng; Lin, Chung Han et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 3, 2005, p. 966-969.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers

AU - Nee, Tzer En

AU - Wang, Jen Cheng

AU - Lin, Chung Han

AU - Lin, Ray Ming

AU - Huang, Ching An

AU - Fang, Bor Ren

AU - Wang, Ruey Yu

PY - 2005

Y1 - 2005

N2 - Cross sections of the electroluminescence (EL) excitation of InGaNGaN multiquantum wells (MQWs) in blue light-emitting diodes (LEDs) with multiquantum barriers (MQBs) have been investigated. It was found that a device with an MQB structure exhibited a higher quantum efficiency, as well as higher temperature insensitivity, compared with the conventional MQW LEDs. A total cross section of 5.3× 10-15 cm2 was obtained for the MQB QWs, by fitting them to the measurement of the spectral intensity at room temperature; the value was 4.5× 10-15 cm2 for those devices with GaN barriers. Not only the EL excitation cross section for active region, but also the abnormal quantum efficiency evolutions were found to be a function of temperature. Moreover, they were in good agreement with the rate equation model.

AB - Cross sections of the electroluminescence (EL) excitation of InGaNGaN multiquantum wells (MQWs) in blue light-emitting diodes (LEDs) with multiquantum barriers (MQBs) have been investigated. It was found that a device with an MQB structure exhibited a higher quantum efficiency, as well as higher temperature insensitivity, compared with the conventional MQW LEDs. A total cross section of 5.3× 10-15 cm2 was obtained for the MQB QWs, by fitting them to the measurement of the spectral intensity at room temperature; the value was 4.5× 10-15 cm2 for those devices with GaN barriers. Not only the EL excitation cross section for active region, but also the abnormal quantum efficiency evolutions were found to be a function of temperature. Moreover, they were in good agreement with the rate equation model.

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SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Cross sections for the investigation of the electroluminescence excitation of InGaNGaN quantum wells in blue light-emitting diodes with multiquantum barriers

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