Current scaling and electron heating in a GaN/AlGaN two-dimensional electron system

Kuang Yao Chen; Li Hung Lin; Zhi Hao Sun; Wen Jang Shiue; C. T. Liang; P. H. Chang; N. C. Chen; Chin An Chang

doi:10.3938/jkps.50.1666

Current scaling and electron heating in a GaN/AlGaN two-dimensional electron system

Kuang Yao Chen^*, Li Hung Lin, Zhi Hao Sun, Wen Jang Shiue, C. T. Liang, P. H. Chang, N. C. Chen, Chin An Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

A GaN/AlGaN two-dimensional electron system (2DES) has been prepared on a Si substrate, and the electron heating effect in the 2DES has been studied experimentally by using the resistance of the 2DES as a self-thermometer. The relation T_e ∼ I^{1. 42} was obtained, which is in contrast to T_e ∼ I^0.5 in the spin-split resistivity peaks in a GaAs/AlGaAs 2DES. A possible reason for this is discussed.

Original language	English
Pages (from-to)	1666-1669
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	6
DOIs	https://doi.org/10.3938/jkps.50.1666
State	Published - 06 2007

Keywords

CMOS
Current scaling
Electron heating
GaN
Si
Two-dimensional electron system

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@article{b9646b313d5444d68cc137322d3069a1,

title = "Current scaling and electron heating in a GaN/AlGaN two-dimensional electron system",

abstract = "A GaN/AlGaN two-dimensional electron system (2DES) has been prepared on a Si substrate, and the electron heating effect in the 2DES has been studied experimentally by using the resistance of the 2DES as a self-thermometer. The relation Te ∼ I1. 42 was obtained, which is in contrast to Te ∼ I0.5 in the spin-split resistivity peaks in a GaAs/AlGaAs 2DES. A possible reason for this is discussed.",

keywords = "CMOS, Current scaling, Electron heating, GaN, Si, Two-dimensional electron system",

author = "Chen, {Kuang Yao} and Lin, {Li Hung} and Sun, {Zhi Hao} and Shiue, {Wen Jang} and Liang, {C. T.} and Chang, {P. H.} and Chen, {N. C.} and Chang, {Chin An}",

year = "2007",

month = jun,

doi = "10.3938/jkps.50.1666",

language = "英语",

volume = "50",

pages = "1666--1669",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "6",

}

TY - JOUR

T1 - Current scaling and electron heating in a GaN/AlGaN two-dimensional electron system

AU - Chen, Kuang Yao

AU - Lin, Li Hung

AU - Sun, Zhi Hao

AU - Shiue, Wen Jang

AU - Liang, C. T.

AU - Chang, P. H.

AU - Chen, N. C.

AU - Chang, Chin An

PY - 2007/6

Y1 - 2007/6

N2 - A GaN/AlGaN two-dimensional electron system (2DES) has been prepared on a Si substrate, and the electron heating effect in the 2DES has been studied experimentally by using the resistance of the 2DES as a self-thermometer. The relation Te ∼ I1. 42 was obtained, which is in contrast to Te ∼ I0.5 in the spin-split resistivity peaks in a GaAs/AlGaAs 2DES. A possible reason for this is discussed.

AB - A GaN/AlGaN two-dimensional electron system (2DES) has been prepared on a Si substrate, and the electron heating effect in the 2DES has been studied experimentally by using the resistance of the 2DES as a self-thermometer. The relation Te ∼ I1. 42 was obtained, which is in contrast to Te ∼ I0.5 in the spin-split resistivity peaks in a GaAs/AlGaAs 2DES. A possible reason for this is discussed.

KW - CMOS

KW - Current scaling

KW - Electron heating

KW - GaN

KW - Si

KW - Two-dimensional electron system

UR - http://www.scopus.com/inward/record.url?scp=34547239404&partnerID=8YFLogxK

U2 - 10.3938/jkps.50.1666

DO - 10.3938/jkps.50.1666

M3 - 文章

AN - SCOPUS:34547239404

SN - 0374-4884

VL - 50

SP - 1666

EP - 1669

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Current scaling and electron heating in a GaN/AlGaN two-dimensional electron system

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Keywords

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