Current scaling and electron heating in a GaN/AlGaN two-dimensional electron system

Kuang Yao Chen*, Li Hung Lin, Zhi Hao Sun, Wen Jang Shiue, C. T. Liang, P. H. Chang, N. C. Chen, Chin An Chang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

A GaN/AlGaN two-dimensional electron system (2DES) has been prepared on a Si substrate, and the electron heating effect in the 2DES has been studied experimentally by using the resistance of the 2DES as a self-thermometer. The relation Te ∼ I1. 42 was obtained, which is in contrast to Te ∼ I0.5 in the spin-split resistivity peaks in a GaAs/AlGaAs 2DES. A possible reason for this is discussed.

Original languageEnglish
Pages (from-to)1666-1669
Number of pages4
JournalJournal of the Korean Physical Society
Volume50
Issue number6
DOIs
StatePublished - 06 2007

Keywords

  • CMOS
  • Current scaling
  • Electron heating
  • GaN
  • Si
  • Two-dimensional electron system

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