Current Transportation Mechanism for HfO2 with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2007
Event	2007 International conference on Solid State Devices and Materials (SSDM 2007) - Ibaraki, Japan Duration: 18 09 2007 → 21 09 2007

Conference	2007 International conference on Solid State Devices and Materials (SSDM 2007)
Period	18/09/07 → 21/09/07

Cite this

@conference{c2931f58a93a47a4994af827d162dbea,

title = "Current Transportation Mechanism for HfO2 with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application",

author = "Woei-Cherng Wu and Chao-Sung Lai and Wang, \{Zhu Ming\} and Jer-Chyi Wang and Ma, \{Ming Wen\} and Tien-Sheng Chao",

year = "2007",

language = "American English",

note = "2007 International conference on Solid State Devices and Materials (SSDM 2007) ; Conference date: 18-09-2007 Through 21-09-2007",

}

TY - CONF

T1 - Current Transportation Mechanism for HfO2 with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application

AU - Wu, Woei-Cherng

AU - Lai, Chao-Sung

AU - Wang, Zhu Ming

AU - Wang, Jer-Chyi

AU - Ma, Ming Wen

AU - Chao, Tien-Sheng

PY - 2007

Y1 - 2007

M3 - Proceeding

T2 - 2007 International conference on Solid State Devices and Materials (SSDM 2007)

Y2 - 18 September 2007 through 21 September 2007

ER -