@inproceedings{d5d059775e9d443dbc035c04f7ad1dfa,
title = "Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes",
abstract = "This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn 1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).",
keywords = "AlO, Current-voltage characteristics, MgO, P-n junction diode, Sputtering system, Thermal annealing, X-ray diffraction, ZnO",
author = "Hsueh, \{Kuang Po\} and Cheng, \{Po Wei\} and Cheng, \{Yi Chang\} and Sheu, \{Jinn Kong\} and Yeh, \{Yu Hsiang\} and Chiu, \{Hsien Chin\} and Wang, \{Hsiang Chun\}",
year = "2013",
doi = "10.1117/12.2003166",
language = "英语",
isbn = "9780819493958",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Oxide-Based Materials and Devices IV",
note = "Oxide-Based Materials and Devices IV ; Conference date: 03-02-2013 Through 06-02-2013",
}