Cu₂O-HTM/SiO₂-ETM assisted for synthesis engineering improving efficiency and stability with heterojunction planar perovskite thin-film solar cells

Perovskite solar cells (PSCs) have been made eligible for proficient power conversion efficiency (PCE) by optimizing the perovskite film's morphology, formation, interfaces, and charge collection for increased effectiveness. This paper applied a new method for Cu₂O/methylammonium lead iodide (MAPbI₃)/SiO₂ structure with heterojunction PSCs. This paper developed a novel synthesis engineering method for thin Cu₂O hole-transporting material layer (HTML) and ultrathin SiO₂ electron-transporting material layer (ETML). Cu₂O HTML and SiO₂ ETML could improve the PCE and carrier charge for recombination and recollection. The architecture includes a reduced film thickness by hetero-contact synthesis engineering, which resulted in an impactful enhancement of open-circuit voltage (Voc). The stable Voc effect was induced by constructing the interfilm of Cu₂O and SiO₂ between the main CH₃NH₃PbI₃ layers, which transported electrons/electron holes, resulting in an excellent PCE of 18.4%. The fabrication showed that inorganic materials can be applied for the potential interfacial engineering of perovskite-based solar cells.