Damage of light-emitting diodes induced by high reverse-bias stress

N. C. Chen; Y. N. Wang; Y. S. Wang; W. C. Lien; Y. C. Chen

doi:10.1016/j.jcrysgro.2008.09.123

Damage of light-emitting diodes induced by high reverse-bias stress

N. C. Chen^*, Y. N. Wang, Y. S. Wang, W. C. Lien, Y. C. Chen

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

19 Scopus citations

Abstract

The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated.

Original language	English
Pages (from-to)	994-997
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.123
State	Published - 15 01 2009

Keywords

A1. Defects
A3. Metal organic chemical vapor deposition
B1. Nitrides
B3. Light-emitting diode

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10.1016/j.jcrysgro.2008.09.123

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title = "Damage of light-emitting diodes induced by high reverse-bias stress",

abstract = "The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated.",

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AU - Chen, N. C.

AU - Wang, Y. N.

AU - Wang, Y. S.

AU - Lien, W. C.

AU - Chen, Y. C.

PY - 2009/1/15

Y1 - 2009/1/15

N2 - The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated.

AB - The ability of a nitride light-emitting diode (LED) to withstand electrostatic discharge (ESD) is important because of the insulating property of the sapphire substrate. Therefore, damage caused by ESD to a nitride LED is a valuable subject. However, damage is caused by ESD in a very short period, so monitoring its evolution is very difficult. Accordingly, ESD experiments are performed and the effects of a high reverse current (HRC) on devices are investigated. Damage caused by ESD and HRC and their other effects on devices are compared. Four distinct effects of the ESD on devices are illustrated.

KW - A1. Defects

KW - A3. Metal organic chemical vapor deposition

KW - B1. Nitrides

KW - B3. Light-emitting diode

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SP - 994

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JO - Journal of Crystal Growth

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ER -

Damage of light-emitting diodes induced by high reverse-bias stress

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