DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs

Hsing Yuan Tu; Tao Hsuan Chou; Yo Sheng Lin; Hsien Chin Chiu; Ping Yu Chen; Wen Chung Wu; Shey Shi Lu

doi:10.1109/LED.2003.809045

DC and RF characteristics of E-mode Ga_0.51In_0.49P-In_0.15Ga_0.85As pseudomorphic HEMTs

Hsing Yuan Tu, Tao Hsuan Chou, Yo Sheng Lin, Hsien Chin Chiu, Ping Yu Chen, Wen Chung Wu, Shey Shi Lu^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Letter › peer-review

13 Scopus citations

Abstract

The dc and RF characteristics of Ga_0.49In_0.51 P-In_0.15Ga_0.85As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 μm and a gate width of 200 μm. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current (I_DS) of 340 mA/mm when the drain-source voltage (V_DS) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured F_min is 0.74 dB under I_DS = 15 mA and V_DS = 2 V.

Original language	English
Pages (from-to)	132-134
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	3
DOIs	https://doi.org/10.1109/LED.2003.809045
State	Published - 03 2003
Externally published	Yes

Keywords

Enhancement mode
GaInP
Pseudomorphic HEMT (pHEMT)
Single-positive-voltage supply

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10.1109/LED.2003.809045

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@article{57be1c257aff4338ac50c6f04a0e9a2b,

title = "DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs",

abstract = "The dc and RF characteristics of Ga0.49In0.51 P-In0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 μm and a gate width of 200 μm. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current (IDS) of 340 mA/mm when the drain-source voltage (VDS) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured Fmin is 0.74 dB under IDS = 15 mA and VDS = 2 V.",

keywords = "Enhancement mode, GaInP, Pseudomorphic HEMT (pHEMT), Single-positive-voltage supply",

author = "Tu, {Hsing Yuan} and Chou, {Tao Hsuan} and Lin, {Yo Sheng} and Chiu, {Hsien Chin} and Chen, {Ping Yu} and Wu, {Wen Chung} and Lu, {Shey Shi}",

year = "2003",

month = mar,

doi = "10.1109/LED.2003.809045",

language = "英语",

volume = "24",

pages = "132--134",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs

AU - Tu, Hsing Yuan

AU - Chou, Tao Hsuan

AU - Lin, Yo Sheng

AU - Chiu, Hsien Chin

AU - Chen, Ping Yu

AU - Wu, Wen Chung

AU - Lu, Shey Shi

PY - 2003/3

Y1 - 2003/3

N2 - The dc and RF characteristics of Ga0.49In0.51 P-In0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 μm and a gate width of 200 μm. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current (IDS) of 340 mA/mm when the drain-source voltage (VDS) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured Fmin is 0.74 dB under IDS = 15 mA and VDS = 2 V.

AB - The dc and RF characteristics of Ga0.49In0.51 P-In0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 μm and a gate width of 200 μm. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current (IDS) of 340 mA/mm when the drain-source voltage (VDS) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured Fmin is 0.74 dB under IDS = 15 mA and VDS = 2 V.

KW - Enhancement mode

KW - GaInP

KW - Pseudomorphic HEMT (pHEMT)

KW - Single-positive-voltage supply

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DO - 10.1109/LED.2003.809045

M3 - 快报

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SN - 0741-3106

VL - 24

SP - 132

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

DC and RF characteristics of E-mode Ga_0.51In_0.49P-In_0.15Ga_0.85As pseudomorphic HEMTs

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