Abstract
By applying 0.7% tensile strain to the flexible die of a 0.13 μm thin-body (40 μm) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current Id,sat was 14.3% higher, and fT increased from 103 to 118 GHz with NFmin decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.
Original language | English |
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Article number | 4015364 |
Pages (from-to) | 2043-2046 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
DOIs | |
State | Published - 2006 |
Externally published | Yes |
Event | 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: 11 06 2006 → 16 06 2006 |
Keywords
- Associated gain
- MOSFET
- Plastic
- RF noise