Abstract
A dominant deep level with an activation energy of 0.23-0.26 eV was observed by admittance spectroscopy in SnTe-doped GaSb layers grown directly on GaAs substrates by molecular beam epitaxy (MBE). The Sb4/Ga flux ratio was found to affect the Hall mobility and the concentration of the deep level in a similar way, with an optimal beam equivalent pressure ratio of around 7 obtained for GaSb grown at 550°C, which should correspond to the lowest ratio at which a Sb-stabilized surface reconstruction can be maintained. This electron level is commonly detected in n-type (SnTe-, S- and Te-doped) GaSb, but not in undoped p-type GaSb, suggesting that the level is not a simple native defect, but may be connected with the impurity used for n-type doping of GaSb.
Original language | English |
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Pages (from-to) | L813-L815 |
Journal | Japanese Journal of Applied Physics |
Volume | 35 |
Issue number | 7 PART A |
DOIs | |
State | Published - 01 07 1996 |
Externally published | Yes |
Keywords
- Admittance spectroscopy
- Deep levels
- GaSb
- SnTe dopants