Defect identification in undoped and phosphorus-doped CuInS2 based on deviations from ideal chemical formula

H. Y. Ueng; H. L. Hwang

doi:10.1063/1.339817

Defect identification in undoped and phosphorus-doped CuInS₂ based on deviations from ideal chemical formula

H. Y. Ueng^*, H. L. Hwang

^*Corresponding author for this work

National Tsing Hua University

Research output: Contribution to journal › Journal Article › peer-review

30 Scopus citations

Abstract

A theoretical model is proposed which is based on the electrical, photoluminescence, and stoichiometric analyses, and this model allows the calculation of the concentration of various defects in undoped and phosphorus-doped CuInS₂ crystals grown by the traveling heater method. All the association and ionization reactions are described in terms of the law of mass action. The results indicate that it can be used to explain material compensation and phosphorus-doping effects in CuInS₂.

Original language	English
Pages (from-to)	434-439
Number of pages	6
Journal	Journal of Applied Physics
Volume	62
Issue number	2
DOIs	https://doi.org/10.1063/1.339817
State	Published - 1987
Externally published	Yes

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title = "Defect identification in undoped and phosphorus-doped CuInS2 based on deviations from ideal chemical formula",

abstract = "A theoretical model is proposed which is based on the electrical, photoluminescence, and stoichiometric analyses, and this model allows the calculation of the concentration of various defects in undoped and phosphorus-doped CuInS2 crystals grown by the traveling heater method. All the association and ionization reactions are described in terms of the law of mass action. The results indicate that it can be used to explain material compensation and phosphorus-doping effects in CuInS2.",

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year = "1987",

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AU - Ueng, H. Y.

AU - Hwang, H. L.

PY - 1987

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N2 - A theoretical model is proposed which is based on the electrical, photoluminescence, and stoichiometric analyses, and this model allows the calculation of the concentration of various defects in undoped and phosphorus-doped CuInS2 crystals grown by the traveling heater method. All the association and ionization reactions are described in terms of the law of mass action. The results indicate that it can be used to explain material compensation and phosphorus-doping effects in CuInS2.

AB - A theoretical model is proposed which is based on the electrical, photoluminescence, and stoichiometric analyses, and this model allows the calculation of the concentration of various defects in undoped and phosphorus-doped CuInS2 crystals grown by the traveling heater method. All the association and ionization reactions are described in terms of the law of mass action. The results indicate that it can be used to explain material compensation and phosphorus-doping effects in CuInS2.

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U2 - 10.1063/1.339817

DO - 10.1063/1.339817

M3 - 文章

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Defect identification in undoped and phosphorus-doped CuInS₂ based on deviations from ideal chemical formula

Abstract

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