Defect structure of non-stoichiometric Cu-I-III-VI2 chalcopyrite semiconductors

H. Y. Ueng; H. L. Hwang

doi:10.1016/0921-5107(92)90297-M

Defect structure of non-stoichiometric Cu-I-III-VI₂ chalcopyrite semiconductors

H. Y. Ueng^*
, H. L. Hwang

^*Corresponding author for this work

National Sun Yat-sen University
National Tsing Hua University

Research output: Contribution to journal › Journal Article › peer-review

18 Scopus citations

Abstract

The defect structure of CuMX₂ (M≡In, Ga and X≡S, Se, Te) was investigated. The defect concentrations were derived as a function of stoichiometric composition, and the carrier concentrations were calculated quantitatively using a theoretical defect model, which could be used to select the proper region of stoichiometry for device designs with specified carrier concentrations. The compensation reaction between dopants and intrinsic defects in CuMX₂ compound semiconductors is quantitatively illustrated.

Original language	English
Pages (from-to)	261-267
Number of pages	7
Journal	Materials Science and Engineering: B
Volume	12
Issue number	3
DOIs	https://doi.org/10.1016/0921-5107(92)90297-M
State	Published - 01 02 1992
Externally published	Yes

Access to Document

10.1016/0921-5107(92)90297-M

Cite this

@article{fca67b1f73764acf80c11f094be9227e,

title = "Defect structure of non-stoichiometric Cu-I-III-VI2 chalcopyrite semiconductors",

abstract = "The defect structure of CuMX2 (M≡In, Ga and X≡S, Se, Te) was investigated. The defect concentrations were derived as a function of stoichiometric composition, and the carrier concentrations were calculated quantitatively using a theoretical defect model, which could be used to select the proper region of stoichiometry for device designs with specified carrier concentrations. The compensation reaction between dopants and intrinsic defects in CuMX2 compound semiconductors is quantitatively illustrated.",

author = "Ueng, \{H. Y.\} and Hwang, \{H. L.\}",

year = "1992",

month = feb,

day = "1",

doi = "10.1016/0921-5107(92)90297-M",

language = "英语",

volume = "12",

pages = "261--267",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "3",

}

TY - JOUR

T1 - Defect structure of non-stoichiometric Cu-I-III-VI2 chalcopyrite semiconductors

AU - Ueng, H. Y.

AU - Hwang, H. L.

PY - 1992/2/1

Y1 - 1992/2/1

N2 - The defect structure of CuMX2 (M≡In, Ga and X≡S, Se, Te) was investigated. The defect concentrations were derived as a function of stoichiometric composition, and the carrier concentrations were calculated quantitatively using a theoretical defect model, which could be used to select the proper region of stoichiometry for device designs with specified carrier concentrations. The compensation reaction between dopants and intrinsic defects in CuMX2 compound semiconductors is quantitatively illustrated.

AB - The defect structure of CuMX2 (M≡In, Ga and X≡S, Se, Te) was investigated. The defect concentrations were derived as a function of stoichiometric composition, and the carrier concentrations were calculated quantitatively using a theoretical defect model, which could be used to select the proper region of stoichiometry for device designs with specified carrier concentrations. The compensation reaction between dopants and intrinsic defects in CuMX2 compound semiconductors is quantitatively illustrated.

UR - https://www.scopus.com/pages/publications/0026818233

U2 - 10.1016/0921-5107(92)90297-M

DO - 10.1016/0921-5107(92)90297-M

M3 - 文章

AN - SCOPUS:0026818233

SN - 0921-5107

VL - 12

SP - 261

EP - 267

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Defect structure of non-stoichiometric Cu-I-III-VI₂ chalcopyrite semiconductors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this