Defects and doping effects in CdTe and CuinS2 by phosphorus ion implantation and pulsed electron beam annealing

H. Y. Ueng; H. L. Hwang

doi:10.4028/www.scientific.net/SSP.1-2.343

Defects and doping effects in CdTe and CuinS₂ by phosphorus ion implantation and pulsed electron beam annealing

H. Y. Ueng
, H. L. Hwang

National Tsing Hua University

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

2 Scopus citations

Abstract

This paper reviews the recent developments of p–type doping in CdTe and CuInS₂. In both cases, hole concentrations exceeding to 10¹⁹ cm^–3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant- and damage-profiles, and the atom redistributions after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms.

Original language	English
Title of host publication	Solid State Phenomena
Publisher	Trans Tech Publications Ltd
Pages	343-359
Number of pages	17
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.1-2.343
State	Published - 1988
Externally published	Yes

Publication series

Name	Solid State Phenomena
Volume	1-2
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Bibliographical note

Publisher Copyright:
© 1988 Trans Tech Publications, Switzerland.

Access to Document

10.4028/www.scientific.net/SSP.1-2.343

Cite this

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abstract = "This paper reviews the recent developments of p–type doping in CdTe and CuInS2. In both cases, hole concentrations exceeding to 1019 cm–3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant- and damage-profiles, and the atom redistributions after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms.",

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AB - This paper reviews the recent developments of p–type doping in CdTe and CuInS2. In both cases, hole concentrations exceeding to 1019 cm–3 have been obtained with phosphorus ion implantation and pulsed electron beam annealing. The implant- and damage-profiles, and the atom redistributions after the annealing were calculated to explain the experimental results. Defect models were proposed to further illustrate the doping mechanisms.

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