Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress a modeling approach

Cher Ming Tan*, Xiangchen Chen

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress a modeling approach'. Together they form a unique fingerprint.

Engineering

Physics

Material Science

Chemical Engineering