Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance

J. W. Shi; C. A. Hsieh; A. C. Shiao; Y. S. Wu; F. H. Huang; S. H. Chen; Y. T. Tsai; J. I. Chyi

doi:10.1109/LPT.2005.854402

Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance

J. W. Shi^*, C. A. Hsieh, A. C. Shiao, Y. S. Wu, F. H. Huang, S. H. Chen, Y. T. Tsai, J. I. Chyi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

15 Scopus citations

Abstract

We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-μm wavelength: the dual-depletion-region EAM. After an n⁺ delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the tradeoff between driving-voltage and electrical bandwidth performance can be released effectively. This new structure can also release the burden imposed on downscaling the width or length of high-speed EAM with low driving-voltage performance. The microwave and electrical-to-optical measurement of this novel device with traveling-wave electrodes show very convincing results.

Original language	English
Pages (from-to)	2068-2070
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	10
DOIs	https://doi.org/10.1109/LPT.2005.854402
State	Published - 10 2005
Externally published	Yes

Keywords

Electroabsorption modulators (EAMs)
Multiple quantum-well (MQW)
Optical communication

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10.1109/LPT.2005.854402

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title = "Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance",

abstract = "We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-μm wavelength: the dual-depletion-region EAM. After an n+ delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the tradeoff between driving-voltage and electrical bandwidth performance can be released effectively. This new structure can also release the burden imposed on downscaling the width or length of high-speed EAM with low driving-voltage performance. The microwave and electrical-to-optical measurement of this novel device with traveling-wave electrodes show very convincing results.",

keywords = "Electroabsorption modulators (EAMs), Multiple quantum-well (MQW), Optical communication",

author = "Shi, {J. W.} and Hsieh, {C. A.} and Shiao, {A. C.} and Wu, {Y. S.} and Huang, {F. H.} and Chen, {S. H.} and Tsai, {Y. T.} and Chyi, {J. I.}",

year = "2005",

month = oct,

doi = "10.1109/LPT.2005.854402",

language = "英语",

volume = "17",

pages = "2068--2070",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance

AU - Shi, J. W.

AU - Hsieh, C. A.

AU - Shiao, A. C.

AU - Wu, Y. S.

AU - Huang, F. H.

AU - Chen, S. H.

AU - Tsai, Y. T.

AU - Chyi, J. I.

PY - 2005/10

Y1 - 2005/10

N2 - We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-μm wavelength: the dual-depletion-region EAM. After an n+ delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the tradeoff between driving-voltage and electrical bandwidth performance can be released effectively. This new structure can also release the burden imposed on downscaling the width or length of high-speed EAM with low driving-voltage performance. The microwave and electrical-to-optical measurement of this novel device with traveling-wave electrodes show very convincing results.

AB - We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-μm wavelength: the dual-depletion-region EAM. After an n+ delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the tradeoff between driving-voltage and electrical bandwidth performance can be released effectively. This new structure can also release the burden imposed on downscaling the width or length of high-speed EAM with low driving-voltage performance. The microwave and electrical-to-optical measurement of this novel device with traveling-wave electrodes show very convincing results.

KW - Electroabsorption modulators (EAMs)

KW - Multiple quantum-well (MQW)

KW - Optical communication

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DO - 10.1109/LPT.2005.854402

M3 - 文章

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SN - 1041-1135

VL - 17

SP - 2068

EP - 2070

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance

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Keywords

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