Deposition of high-k samarium oxide membrane on polysilicon for the extented-gate field-effect transistor (EGFET) applications

Chyuan Haur Kao; Hsiang Chen; Jer Chyi Wang; Yu Cheng Chu; Chiao Sung Lai; Shih Po Lin; Chuan Yu Huang; Jiun Cheng Ou

doi:10.14447/jnmes.v17i1.437

Deposition of high-k samarium oxide membrane on polysilicon for the extented-gate field-effect transistor (EGFET) applications

Chyuan Haur Kao, Hsiang Chen^*, Jer Chyi Wang, Yu Cheng Chu, Chiao Sung Lai, Shih Po Lin, Chuan Yu Huang, Jiun Cheng Ou

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 °C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications.

Original language	English
Pages (from-to)	13-16
Number of pages	4
Journal	Journal of New Materials for Electrochemical Systems
Volume	17
Issue number	1
DOIs	https://doi.org/10.14447/jnmes.v17i1.437
State	Published - 2014

Keywords

Annealing
EGFET
Hysteresis effects
Ph. sensor
Samarium oxide

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10.14447/jnmes.v17i1.437

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title = "Deposition of high-k samarium oxide membrane on polysilicon for the extented-gate field-effect transistor (EGFET) applications",

abstract = "The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 °C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications.",

keywords = "Annealing, EGFET, Hysteresis effects, Ph. sensor, Samarium oxide",

author = "Kao, {Chyuan Haur} and Hsiang Chen and Wang, {Jer Chyi} and Chu, {Yu Cheng} and Lai, {Chiao Sung} and Lin, {Shih Po} and Huang, {Chuan Yu} and Ou, {Jiun Cheng}",

year = "2014",

doi = "10.14447/jnmes.v17i1.437",

language = "英语",

volume = "17",

pages = "13--16",

journal = "Journal of New Materials for Electrochemical Systems",

issn = "1480-2422",

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T1 - Deposition of high-k samarium oxide membrane on polysilicon for the extented-gate field-effect transistor (EGFET) applications

AU - Kao, Chyuan Haur

AU - Chen, Hsiang

AU - Wang, Jer Chyi

AU - Chu, Yu Cheng

AU - Lai, Chiao Sung

AU - Lin, Shih Po

AU - Huang, Chuan Yu

AU - Ou, Jiun Cheng

PY - 2014

Y1 - 2014

N2 - The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 °C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications.

AB - The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 °C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications.

KW - Annealing

KW - EGFET

KW - Hysteresis effects

KW - Ph. sensor

KW - Samarium oxide

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U2 - 10.14447/jnmes.v17i1.437

DO - 10.14447/jnmes.v17i1.437

M3 - 文章

AN - SCOPUS:84897988627

SN - 1480-2422

VL - 17

SP - 13

EP - 16

JO - Journal of New Materials for Electrochemical Systems

JF - Journal of New Materials for Electrochemical Systems

IS - 1

ER -

Deposition of high-k samarium oxide membrane on polysilicon for the extented-gate field-effect transistor (EGFET) applications

Abstract

Keywords

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