Deposition of stoichiometric SiO2 on silicon-germanium strained layers

B. Senapati; S. Maikap; L. K. Bera; C. K. Maiti

Deposition of stoichiometric SiO₂ on silicon-germanium strained layers

B. Senapati^*, S. Maikap, L. K. Bera, C. K. Maiti

^*Corresponding author for this work

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Conference article › peer-review

Abstract

High quality stoichiometric SiO₂ films are deposited on strained-SiGe at a low temperature by microwave discharge cavity plasma. The electrical properties of deposited oxide is characterized using metal-oxide-semiconductor structure. These properties are found to be excellent potential for VLSI/ULSI applications.

Original language	English
Pages (from-to)	I/-
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3975
State	Published - 2000
Externally published	Yes
Event	IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India Duration: 14 12 1999 → 18 12 1999

Cite this

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title = "Deposition of stoichiometric SiO2 on silicon-germanium strained layers",

abstract = "High quality stoichiometric SiO2 films are deposited on strained-SiGe at a low temperature by microwave discharge cavity plasma. The electrical properties of deposited oxide is characterized using metal-oxide-semiconductor structure. These properties are found to be excellent potential for VLSI/ULSI applications.",

author = "B. Senapati and S. Maikap and Bera, {L. K.} and Maiti, {C. K.}",

year = "2000",

language = "英语",

volume = "3975",

pages = "I/--",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices ; Conference date: 14-12-1999 Through 18-12-1999",

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TY - JOUR

T1 - Deposition of stoichiometric SiO2 on silicon-germanium strained layers

AU - Senapati, B.

AU - Maikap, S.

AU - Bera, L. K.

AU - Maiti, C. K.

PY - 2000

Y1 - 2000

N2 - High quality stoichiometric SiO2 films are deposited on strained-SiGe at a low temperature by microwave discharge cavity plasma. The electrical properties of deposited oxide is characterized using metal-oxide-semiconductor structure. These properties are found to be excellent potential for VLSI/ULSI applications.

AB - High quality stoichiometric SiO2 films are deposited on strained-SiGe at a low temperature by microwave discharge cavity plasma. The electrical properties of deposited oxide is characterized using metal-oxide-semiconductor structure. These properties are found to be excellent potential for VLSI/ULSI applications.

UR - http://www.scopus.com/inward/record.url?scp=0033722527&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0033722527

SN - 0277-786X

VL - 3975

SP - I/-

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices

Y2 - 14 December 1999 through 18 December 1999

ER -

Deposition of stoichiometric SiO₂ on silicon-germanium strained layers

Abstract

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