Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy

Yang Liu; Yong Qing Fu; Tu Pei Chen; Man Siu Tse; Steve Fung; Jang Hsing Hsieh; Xiao Hong Yang

doi:10.1143/jjap.42.l1394

Depth Profiling of Si Oxidation States in Si-Implanted SiO₂ Films by X-Ray Photoelectron Spectroscopy

Yang Liu^*, Yong Qing Fu, Tu Pei Chen, Man Siu Tse, Steve Fung, Jang Hsing Hsieh, Xiao Hong Yang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

Thin SiO₂ films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and high-temperature annealing, which are used in the application of single-electron memory devices, are studied by X-ray photoelectron spectroscopy (XPS). XPS analysis shows the existence of five Si oxidation states Siⁿ⁺ (n =0, 1, 2, 3, and 4) in the SiO₂ films, indicating that not all of the implanted Si atoms are converted to nanocrystals during annealing and some of them form Si suboxides corresponding to the three oxidation states Si² (n = 1, 2 and 3). The relative concentration of each oxidation state at various depths is determined quantitatively by XPS analysis. In addition, the effects of annealing on both the oxidation states and their depth distributions are also studied.

Original language	English
Pages (from-to)	L1394-L1396
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	11 B
DOIs	https://doi.org/10.1143/jjap.42.l1394
State	Published - 15 11 2003
Externally published	Yes

Keywords

Depth profiling
Si ion Implantation
Si nanocrystals
Si oxidation states
XPS

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10.1143/jjap.42.l1394

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title = "Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy",

abstract = "Thin SiO2 films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and high-temperature annealing, which are used in the application of single-electron memory devices, are studied by X-ray photoelectron spectroscopy (XPS). XPS analysis shows the existence of five Si oxidation states Sin+ (n =0, 1, 2, 3, and 4) in the SiO2 films, indicating that not all of the implanted Si atoms are converted to nanocrystals during annealing and some of them form Si suboxides corresponding to the three oxidation states Si2 (n = 1, 2 and 3). The relative concentration of each oxidation state at various depths is determined quantitatively by XPS analysis. In addition, the effects of annealing on both the oxidation states and their depth distributions are also studied.",

keywords = "Depth profiling, Si ion Implantation, Si nanocrystals, Si oxidation states, XPS",

author = "Yang Liu and Fu, {Yong Qing} and Chen, {Tu Pei} and Tse, {Man Siu} and Steve Fung and Hsieh, {Jang Hsing} and Yang, {Xiao Hong}",

year = "2003",

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doi = "10.1143/jjap.42.l1394",

language = "英语",

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T1 - Depth Profiling of Si Oxidation States in Si-Implanted SiO2 Films by X-Ray Photoelectron Spectroscopy

AU - Liu, Yang

AU - Fu, Yong Qing

AU - Chen, Tu Pei

AU - Tse, Man Siu

AU - Fung, Steve

AU - Hsieh, Jang Hsing

AU - Yang, Xiao Hong

PY - 2003/11/15

Y1 - 2003/11/15

N2 - Thin SiO2 films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and high-temperature annealing, which are used in the application of single-electron memory devices, are studied by X-ray photoelectron spectroscopy (XPS). XPS analysis shows the existence of five Si oxidation states Sin+ (n =0, 1, 2, 3, and 4) in the SiO2 films, indicating that not all of the implanted Si atoms are converted to nanocrystals during annealing and some of them form Si suboxides corresponding to the three oxidation states Si2 (n = 1, 2 and 3). The relative concentration of each oxidation state at various depths is determined quantitatively by XPS analysis. In addition, the effects of annealing on both the oxidation states and their depth distributions are also studied.

AB - Thin SiO2 films containing Si nanocrystals (nc-Si) prepared by low-energy Si ion implantation and high-temperature annealing, which are used in the application of single-electron memory devices, are studied by X-ray photoelectron spectroscopy (XPS). XPS analysis shows the existence of five Si oxidation states Sin+ (n =0, 1, 2, 3, and 4) in the SiO2 films, indicating that not all of the implanted Si atoms are converted to nanocrystals during annealing and some of them form Si suboxides corresponding to the three oxidation states Si2 (n = 1, 2 and 3). The relative concentration of each oxidation state at various depths is determined quantitatively by XPS analysis. In addition, the effects of annealing on both the oxidation states and their depth distributions are also studied.

KW - Depth profiling

KW - Si ion Implantation

KW - Si nanocrystals

KW - Si oxidation states

KW - XPS

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U2 - 10.1143/jjap.42.l1394

DO - 10.1143/jjap.42.l1394

M3 - 文章

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SN - 0021-4922

VL - 42

SP - L1394-L1396

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11 B

ER -

Depth Profiling of Si Oxidation States in Si-Implanted SiO₂ Films by X-Ray Photoelectron Spectroscopy

Abstract

Keywords

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