Design and demonstration of high-power and high-speed evanescently coupled photodiodes with partially p-doped photo-absorption layer

Y. S. Wu*, J. W. Shi, J. Y. Wu, F. H. Huang, Y. J. Chan, Y. L. Huang, R. Xuan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An evanescently-coupled-photodiode with partially p-doped photo-absorption layer was demonstrated and designed by a bandwidth simulation model to optimize its speed performance. Excellent performance of speed, saturation-power, and responsivity can be achieved simultaneously at 1.55μm wavelength.

Original languageEnglish
Title of host publication2005 Conference on Lasers and Electro-Optics, CLEO
PublisherOptical Society of America
Pages579-581
Number of pages3
ISBN (Print)1557527954, 9781557527950
DOIs
StatePublished - 2005
Externally publishedYes
Event2005 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, United States
Duration: 22 05 200527 05 2005

Publication series

Name2005 Conference on Lasers and Electro-Optics, CLEO
Volume1

Conference

Conference2005 Conference on Lasers and Electro-Optics, CLEO
Country/TerritoryUnited States
CityBaltimore, MD
Period22/05/0527/05/05

Fingerprint

Dive into the research topics of 'Design and demonstration of high-power and high-speed evanescently coupled photodiodes with partially p-doped photo-absorption layer'. Together they form a unique fingerprint.

Cite this