Design and demonstration of high-power and high-speed evanescently coupled photodiodes with partially p-doped photo-absorption layer

Y. S. Wu, J. W. Shi*, J. Y. Wu, F. H. Huang, Y. J. Chan, Y. L. Huang, R. Xuan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An evanescently-coupled-photodiode with partially p-doped photo-absorption layer was demonstrated and designed by a bandwidth simulation model to optimize its speed performance. Excellent performance of speed, saturation-power, and responsivity can be achieved simultaneously at 1.55μm wavelength.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2005
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
StatePublished - 2005
Externally publishedYes
EventConference on Lasers and Electro-Optics, CLEO 2005 - Baltimore, MD, United States
Duration: 22 05 200522 05 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2005
Country/TerritoryUnited States
CityBaltimore, MD
Period22/05/0522/05/05

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