Design and fabrication of multiplexer driver for InP-laser arrays with waveguide

Jian Chiun Liou; Cihun Siyong Alex Gong; Cheng Fu Yang; Yen Hsiang Fang

doi:10.1007/s11082-016-0401-9

Design and fabrication of multiplexer driver for InP-laser arrays with waveguide

Jian Chiun Liou^*, Cihun Siyong Alex Gong, Cheng Fu Yang, Yen Hsiang Fang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

To reduce the noise interference, we designed multiplexer-drive circuit used in InP laser array. This system is the use of D-Filp Flop circuit architecture do digital operations. It controls two adjacent InP laser systems, two InP laser is not functioning at the same time and will not cause interference. In order to investigate the micro-disk laser under the band at 1310 nm, this system using 2 mm × 2 mm InP laser chips bonding through the DVS-BCB to 2 cm × 2 cm hybrid laser processes, including SOI wafer waveguides, processing approach and chip architecture photo investigations. The I–V curve measured under the needle was found operating under current of approximately 30 mA at 1.5 V. The maximum optical power is about 2.2 μW at 40 mA.

Original language	English
Article number	97
Pages (from-to)	1-14
Number of pages	14
Journal	Optical and Quantum Electronics
Volume	48
Issue number	2
DOIs	https://doi.org/10.1007/s11082-016-0401-9
State	Published - 01 02 2016

Bibliographical note

Publisher Copyright:
© 2016, Springer Science+Business Media New York.

Keywords

InP laser
Multiplexer
Optical power
SOI
Wavguide

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10.1007/s11082-016-0401-9

Cite this

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abstract = "To reduce the noise interference, we designed multiplexer-drive circuit used in InP laser array. This system is the use of D-Filp Flop circuit architecture do digital operations. It controls two adjacent InP laser systems, two InP laser is not functioning at the same time and will not cause interference. In order to investigate the micro-disk laser under the band at 1310 nm, this system using 2 mm × 2 mm InP laser chips bonding through the DVS-BCB to 2 cm × 2 cm hybrid laser processes, including SOI wafer waveguides, processing approach and chip architecture photo investigations. The I–V curve measured under the needle was found operating under current of approximately 30 mA at 1.5 V. The maximum optical power is about 2.2 μW at 40 mA.",

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AB - To reduce the noise interference, we designed multiplexer-drive circuit used in InP laser array. This system is the use of D-Filp Flop circuit architecture do digital operations. It controls two adjacent InP laser systems, two InP laser is not functioning at the same time and will not cause interference. In order to investigate the micro-disk laser under the band at 1310 nm, this system using 2 mm × 2 mm InP laser chips bonding through the DVS-BCB to 2 cm × 2 cm hybrid laser processes, including SOI wafer waveguides, processing approach and chip architecture photo investigations. The I–V curve measured under the needle was found operating under current of approximately 30 mA at 1.5 V. The maximum optical power is about 2.2 μW at 40 mA.

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Design and fabrication of multiplexer driver for InP-laser arrays with waveguide

Abstract

Bibliographical note

Keywords

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