Design of a low-power content-addressable memory using double-feedback match-line sense amplifiers

Meng Chou Chang*, Ming Hsun Hsieh, Shih Ju Tsai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents the design of a low-power ternary content-addressable memory (TCAM) based on the proposed double-feedback match-line sense amplifier (DF-MLSA). DF-MLSA achieves power savings by reducing match-line voltage swing and search-line switching activity in a TCAM and employs the double positive-feedback network to boost the search speed of the TCAM. We have employed Hspice to evaluate various match-line sensing circuits using the Berkeley Predictive Technology Model (PTM) for 65 nm transistor model with supply voltage of 1.1 V and temperature of 25 °C. The simulation results show that the proposed DF-MLSA can achieve a search time of 0.49699 ns and an energy consumption of 0.201474 fJ/bit/search. The measured results show that the proposed DF-MLSA can reduce the energy consumption by 85.481%, 21.195%, and 10.545% compared to the conventional precharge MLSA, the stability-based MLSA, and the positive-feedback MLSA, respectively.

Original languageEnglish
Title of host publicationAdvances in Mechanical and Electronic Engineering
Pages433-438
Number of pages6
EditionVOL. 3
DOIs
StatePublished - 2013
Externally publishedYes
Event2012 International Conference on Mechanical and Electronic Engineering, ICMEE 2012 - Hefei, China
Duration: 23 06 201224 06 2012

Publication series

NameLecture Notes in Electrical Engineering
NumberVOL. 3
Volume178 LNEE
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Conference

Conference2012 International Conference on Mechanical and Electronic Engineering, ICMEE 2012
Country/TerritoryChina
CityHefei
Period23/06/1224/06/12

Keywords

  • Content-addressable memory (CAM)
  • match-line sense amplifier

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