Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology

H. L. Kao; C. S. Yeh; C. L. Cho; B. W. Wang; P. C. Lee; B. H. Wei; H. C. Chiu

doi:10.1109/DDECS.2013.6549827

Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology

H. L. Kao, C. S. Yeh, C. L. Cho, B. W. Wang, P. C. Lee, B. H. Wei, H. C. Chiu

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

This paper presents an S-band low noise amplifier that uses a two-stage configuration. The first stage has a cascode topology and the second stage has a RC feedback topology. The S-band LNA uses a 0.35 μm AlGaN/GaN HEMT on a Si-substrate. The results show a maximum gain of 17.2 dB, a minimum noise figure of 2.9 dB and an input/output return loss greater than 9.2/10 dB. The input IIP3 at 2.8 GHz is 2.5 dBm and the unit consumes 230 mW of power.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013
Publisher	IEEE Computer Society
Pages	250-253
Number of pages	4
ISBN (Print)	9781467361361
DOIs	https://doi.org/10.1109/DDECS.2013.6549827
State	Published - 2013
Event	2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013 - Karlovy Vary, Czech Republic Duration: 08 04 2013 → 10 04 2013

Publication series

Name	Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013

Conference

Conference	2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013
Country/Territory	Czech Republic
City	Karlovy Vary
Period	08/04/13 → 10/04/13

Keywords

AlGaN/GaN HEMT on Si
LNA
S-band

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10.1109/DDECS.2013.6549827

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Kao, H. L., Yeh, C. S., Cho, C. L., Wang, B. W., Lee, P. C., Wei, B. H., & Chiu, H. C. (2013). Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology. In Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013 (pp. 250-253). Article 6549827 (Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013). IEEE Computer Society. https://doi.org/10.1109/DDECS.2013.6549827

Kao, H. L. ; Yeh, C. S. ; Cho, C. L. et al. / Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology. Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013. IEEE Computer Society, 2013. pp. 250-253 (Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013).

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title = "Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology",

abstract = "This paper presents an S-band low noise amplifier that uses a two-stage configuration. The first stage has a cascode topology and the second stage has a RC feedback topology. The S-band LNA uses a 0.35 μm AlGaN/GaN HEMT on a Si-substrate. The results show a maximum gain of 17.2 dB, a minimum noise figure of 2.9 dB and an input/output return loss greater than 9.2/10 dB. The input IIP3 at 2.8 GHz is 2.5 dBm and the unit consumes 230 mW of power.",

keywords = "AlGaN/GaN HEMT on Si, LNA, S-band",

author = "Kao, {H. L.} and Yeh, {C. S.} and Cho, {C. L.} and Wang, {B. W.} and Lee, {P. C.} and Wei, {B. H.} and Chiu, {H. C.}",

year = "2013",

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language = "英语",

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booktitle = "Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013",

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Kao, HL, Yeh, CS, Cho, CL, Wang, BW, Lee, PC, Wei, BH & Chiu, HC 2013, Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology. in Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013., 6549827, Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013, IEEE Computer Society, pp. 250-253, 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013, Karlovy Vary, Czech Republic, 08/04/13. https://doi.org/10.1109/DDECS.2013.6549827

Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology. / Kao, H. L.; Yeh, C. S.; Cho, C. L. et al.
Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013. IEEE Computer Society, 2013. p. 250-253 6549827 (Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kao, H. L.

AU - Yeh, C. S.

AU - Cho, C. L.

AU - Wang, B. W.

AU - Lee, P. C.

AU - Wei, B. H.

AU - Chiu, H. C.

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N2 - This paper presents an S-band low noise amplifier that uses a two-stage configuration. The first stage has a cascode topology and the second stage has a RC feedback topology. The S-band LNA uses a 0.35 μm AlGaN/GaN HEMT on a Si-substrate. The results show a maximum gain of 17.2 dB, a minimum noise figure of 2.9 dB and an input/output return loss greater than 9.2/10 dB. The input IIP3 at 2.8 GHz is 2.5 dBm and the unit consumes 230 mW of power.

AB - This paper presents an S-band low noise amplifier that uses a two-stage configuration. The first stage has a cascode topology and the second stage has a RC feedback topology. The S-band LNA uses a 0.35 μm AlGaN/GaN HEMT on a Si-substrate. The results show a maximum gain of 17.2 dB, a minimum noise figure of 2.9 dB and an input/output return loss greater than 9.2/10 dB. The input IIP3 at 2.8 GHz is 2.5 dBm and the unit consumes 230 mW of power.

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Kao HL, Yeh CS, Cho CL, Wang BW, Lee PC, Wei BH et al. Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology. In Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013. IEEE Computer Society. 2013. p. 250-253. 6549827. (Proceedings of the 2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2013). doi: 10.1109/DDECS.2013.6549827

Design of an S-band 0.35 μm AlGaN/GaN LNA using cascode topology

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