Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET

Meng Chou Chang; Kai Lun He; Yu Chieh Wang

doi:10.1109/GCCE.2014.7031172

Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET

Meng Chou Chang^*
, Kai Lun He
, Yu Chieh Wang

^*Corresponding author for this work

National Changhua University of Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

14 Scopus citations

Abstract

An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.

Original language	English
Title of host publication	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	358-359
Number of pages	2
ISBN (Electronic)	9781479951451
DOIs	https://doi.org/10.1109/GCCE.2014.7031172
State	Published - 03 02 2014
Externally published	Yes
Event	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan Duration: 07 10 2014 → 10 10 2014

Publication series

Name	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014

Conference

Conference	2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
Country/Territory	Japan
City	Tokyo
Period	07/10/14 → 10/10/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

FinFET
Ternary content-addressable memory (TCAM)
low-power electronics

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10.1109/GCCE.2014.7031172

Cite this

Chang, M. C., He, K. L., & Wang, Y. C. (2014). Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. In 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 (pp. 358-359). Article 7031172 (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GCCE.2014.7031172

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title = "Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET",

abstract = "An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35\%, and improve the energy-delay product by 30\%.",

keywords = "FinFET, Ternary content-addressable memory (TCAM), low-power electronics",

author = "Chang, \{Meng Chou\} and He, \{Kai Lun\} and Wang, \{Yu Chieh\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 ; Conference date: 07-10-2014 Through 10-10-2014",

year = "2014",

month = feb,

day = "3",

doi = "10.1109/GCCE.2014.7031172",

language = "英语",

series = "2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014",

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Chang, MC, He, KL & Wang, YC 2014, Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. in 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014., 7031172, 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014, Institute of Electrical and Electronics Engineers Inc., pp. 358-359, 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014, Tokyo, Japan, 07/10/14. https://doi.org/10.1109/GCCE.2014.7031172

Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET. / Chang, Meng Chou; He, Kai Lun; Wang, Yu Chieh.
2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 358-359 7031172 (2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - He, Kai Lun

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PY - 2014/2/3

Y1 - 2014/2/3

N2 - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.

AB - An independent-gate FinFET can operate in three modes: SG (shorted-gate), IG (independent-gate), and LP (low-power) modes, and thus a FinFET-based circuit offers a rich design space to explore. In this paper, we explore the best configuration for the FinFET-based TCAM cell. Compared with the base TCAM cell, the proposed TCAM cell Config-LPSG-1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.

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KW - Ternary content-addressable memory (TCAM)

KW - low-power electronics

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M3 - 会议稿件

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014

Y2 - 7 October 2014 through 10 October 2014

ER -

Design of asymmetric TCAM (ternary content-addressable memory) cells using FinFET

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Keywords

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