Design of GaN based Comparator Circuit for Radiation Detectors

Vimal Kant Pandey, Cher Ming Tan, Sandeep Sharma

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

GaN HEMT transistors has significant advantage over conventional silicon counterpart, operating in radiation environment. In particle radiation therapy electronic devices are exposed to radiation which degrades their reliability. This paper aims to design a GaN based comparator circuit which is an essential circuit of the front end of radiation detectors used in particle radiation therapy. The circuit is designed using EPC8002 GaN transistors and the simulation results show that it can operate at high frequency (>20MHz) with the propagation delay of less than 1ns. The designed circuit is also tested with the output obtained from H8500 position sensitive photomultiplier tube and simulation result shows the satisfactory output from the comparator.

Original languageEnglish
Title of host publication2020 IEEE 17th India Council International Conference, INDICON 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728169163
DOIs
StatePublished - 10 12 2020
Event17th IEEE India Council International Conference, INDICON 2020 - Virtual, New Delhi, India
Duration: 10 12 202013 12 2020

Publication series

Name2020 IEEE 17th India Council International Conference, INDICON 2020

Conference

Conference17th IEEE India Council International Conference, INDICON 2020
Country/TerritoryIndia
CityVirtual, New Delhi
Period10/12/2013/12/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

Keywords

  • GaN HEMT
  • GaN comparator
  • radiation
  • radiation detectors

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